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Matthias Wuttig

Matthias Wuttig appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.app-phphysics.opticscond-mat.mes-hallcond-mat.dis-nn

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Published work

7 published item(s)

preprint2022arXiv

Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $μ$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $μ$m to 28 $μ$m indicates the suitability of PtSe$_2$ for PDs far into the infrared wavelength range. Our PtSe$_2$ PDs integrated by direct growth outperform PtSe$_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe$_2$ an attractive 2D material for optoelectronics and PICs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Crystallization and Vitrification Kinetics by Design: The Role of Chemical Bonding

Controlling a state of material between its crystalline and glassy phase has fostered many real-world applications. Nevertheless, design rules for crystallization and vitrification kinetics still lack predictive power. Here, we identify stoichiometry trends for these processes in phase change materials, i.e. along the GeTe-GeSe, GeTe-SnTe, and GeTe-Sb2Te3 pseudo-binary lines employing a pump-probe laser setup and calorimetry. We discover a clear stoichiometry dependence of crystallization speed along a line connecting regions characterized by two fundamental bonding types, metallic and covalent bonding. Increasing covalency slows down crystallization by six orders of magnitude and promotes vitrification. The stoichiometry dependence is correlated with material properties, such as the optical properties of the crystalline phase and a bond indicator, the number of electrons shared between adjacent atoms. A quantum-chemical map explains these trends and provides a blueprint to design crystallization kinetics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrically driven programmable phase-change meta-switch reaching 80% efficiency

Despite recent advances in active metaoptics, wide dynamic range combined with high-speed reconfigurable solutions is still elusive. Phase-change materials (PCMs) offer a compelling platform for metasurface optical elements, owing to the large index contrast and fast yet stable phase transition properties. Here, we experimentally demonstrate an in situ electrically-driven reprogrammable metasurface by harnessing the unique properties of a phase-change chalcogenide alloy, Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST), in order to realize fast, non-volatile, reversible, multilevel, and pronounced optical modulation in the near-infrared spectral range. Co-optimized through a multiphysics analysis, we integrate an efficient heterostructure resistive microheater that indirectly heats and transforms the embedded GST film without compromising the optical performance of the metasurface even after several reversible phase transitions. A hybrid plasmonic-PCM meta-switch with a record electrical modulation of the reflectance over eleven-fold (an absolute reflectance contrast reaching 80%), unprecedented quasi-continuous spectral tuning over 250 nm, and switching speed that can potentially reach a few kHz is presented. Our work represents a significant step towards the development of fully integrable dynamic metasurfaces and their potential for beamforming applications.

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preprint2019arXiv

Surface Polariton-Like s-Polarized Waveguide Modes in Switchable Dielectric Thin-Films on Polar Crystals

Surface phonon polaritons (SPhP) and surface plasmon polaritons (SPP), evanescent modes supported by media with negative permittivity, are a fundamental building block of nanophotonics. These modes are unmatched in terms of field enhancement and spatial confinement, and dynamical all-optical control can be achieved e.g. by employing phase-change materials (PCMs). However, the excitation of surface polaritons in planar structures is intrinsically limited to p-polarization. On the contrary, waveguide modes in high-permittivity films can couple to both p- and s-polarized light, and in thin films, their confinement can become comparable to surface polaritons. Here we demonstrate that the s-polarized waveguide mode in a thin Ge$_3$Sb$_2$Te$_6$ (GST) film features a similar dispersion, confinement, and electric field enhancement as the SPhP mode of the silicon carbide (SiC) substrate, while even expanding the allowed frequency range. Moreover, we experimentally show that switching the GST film grants non-volatile control over the SPhP and the waveguide mode dispersions. We provide an analytical model for the description of the GST/SiC waveguide mode and show that our concept is applicable to the broad variety of polar crystals throughout the infrared spectral range. As such, complementarily to the polarization-limited surface polaritons, the s-polarized PCM waveguide mode constitutes a promising additional building block for nanophotonic applications.

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preprint2016arXiv

Interband characterization and electronic transport control of nanoscaled GeTe/Sb$_2$Te$_3$ superlattices

The extraordinary electronic and optical properties of the crystal-to-amorphous transition in phase-change materials led to important developments in memory applications. A promising outlook is offered by nanoscaling such phase-change structures. Following this research line, we study the interband optical transmission spectra of nanoscaled GeTe/Sb$_2$Te$_3$ chalcogenide superlattice films. We determine, for films with varying stacking sequence and growth methods, the density and scattering time of the free electrons, and the characteristics of the valence-to-conduction transition. It is found that the free electron density decreases with increasing GeTe content, for sub-layer thickness below $\sim$3 nm. A simple band model analysis suggests that GeTe and Sb$_2$Te$_3$ layers mix, forming a standard GeSbTe alloy buffer layer. We show that it is possible to control the electronic transport properties of the films by properly choosing the deposition layer thickness and we derive a model for arbitrary film stacks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Picosecond electric-field-induced threshold switching in phase-change materials

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on sub-picosecond time-scales - faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe

Phase change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage, and their fast switching and a pronounced change of resistivity upon crystallization are also very attractive for nonvolatile electronic data storage. Nevertheless there are still several open questions regarding the electronic states and charge transport in these compounds. In this work we study electrical transport in thin metallic films of the disordered, crystalline phase change material Ge$_1$Sb$_2$Te$_4$. We observe weak antilocalization and disorder enhanced Coulomb interaction effects at low temperatures, and separate the contributions of these two phenomena to the temperature dependence of the resistivity, Hall effect, and magnetoresistance. Strong spin-orbit scattering causes positive magnetoresistance at all temperatures, and a careful analysis of the low-field magnetoresistance allows us to extract the temperature dependent electron dephasing rate and study other scattering phenomena. We find electron dephasing due to inelastic electron-phonon scattering at higher temperatures, electron-electron scattering dephasing at intermediate temperatures, and a crossover to weak temperature dependence below 1 K.

0 citations0 reviewsNo code linkedOpen access