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Researcher profile

Matthias Pickem

Matthias Pickem contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2022arXiv

Particle-hole asymmetric lifetimes promoted by spin and orbital fluctuations in SrVO$_3$ monolayers

The two-dimensional nature of engineered transition-metal ultra-thin oxide films offers a large playground of yet to be fully understood physics. Here, we study pristine SrVO$_3$ monolayers that have recently been predicted to display a variety of magnetic and orbital orders. Above all ordering temperatures, we find that the associated non-local fluctuations lead to a momentum differentiation in the self-energy, particularly in the scattering rate. In the one-band 2D Hubbard model, momentum-selectivity on the Fermi surface (&#34;$k=k_F$&#34;) is known to lead to pseudogap physics. Here instead, in the multi-orbital case, we evidence a differentiation between momenta on the occupied (&#34;$k<k_F$&#34;) and the unoccupied side (&#34;$k>k_F$&#34;) of the Fermi surface. Our work, based on the dynamical vertex approximation, complements the understanding of spectral signatures of non-local fluctuations, calls to (re)examine other ultra-thin oxide films and interfaces with methods beyond dynamical mean-field theory, and may point to correlation-enhanced thermoelectric effects.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a capping layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit.

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preprint2022arXiv

Zoology of spin and orbital fluctuations in ultrathin oxide films

Many metallic transition-metal oxides turn insulating when grown as films that are only a few unit-cells thick. The microscopic origins of these thickness induced metal-to-insulator transitions however remain under dispute. Here, we simulate the extreme case of a monolayer of an inconspicuous correlated metal -- the strontium vanadate SrVO$_3$ -- deposited on a SrTiO$_3$ substrate. Crucially, our system can have a termination to vacuum consisting of either a SrO or a VO$_2$ top layer. While we find that both lead to Mott insulating behavior at nominal stoichiometry, the phase diagram emerging upon doping -- chemically or through an applied gate voltage -- is qualitatively different. Indeed, our many-body calculations reveal a cornucopia of nonlocal fluctuations associated with (in)commensurate antiferromagnetic, ferromagnetic, as well as stripe and checkerboard orbital ordering instabilities. Identifying that the two geometries yield crystal-field splittings of opposite signs, we elucidate the ensuing phases through the lens of the orbital degrees of freedom. Quite generally, our work highlights that interface and surface reconstruction and the deformation or severing of coordination polyhedra in ultra-thin films drive rich properties that are radically different from the material&#39;s bulk physics.

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preprint2021arXiv

Prototypical many-body signatures in transport properties of semiconductors

We devise a methodology for charge, heat, and entropy transport driven by carriers with finite lifetimes. Combining numerical simulations with analytical expressions for low temperatures, we establish a comprehensive and thermodynamically consistent phenomenology for transport properties in semiconductors. We demonstrate that the scattering rate (inverse lifetime) is a relevant energy scale: It causes the emergence of several characteristic features in each transport observable. The theory is capable to reproduce -- with only a minimal input electronic structure -- the full temperature profiles measured in correlated narrow-gap semiconductors. In particular, we account for the previously elusive low-$T$ saturation of the resistivity and the Hall coefficient, as well as the (linear) vanishing of the Seebeck and Nernst coefficient in systems, such as FeSb$_2$, FeAs$_2$, RuSb$_2$ and FeGa$_3$.

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preprint2020arXiv

Self-consistent ladder D$Γ$A approach

We present and implement a self-consistent D$Γ$A approach for multi-orbital models and ab initio materials calculations. It is applied to the one-band Hubbard model at various interaction strengths with and without doping, to the two-band Hubbard model with two largely different bandwidths, and to SrVO$_3$. The self-energy feedback reduces critical temperatures compared to dynamical mean-field theory, even to zero temperature in two-dimensions. Compared to a one-shot, non-self-consistent calculation the non-local correlations are significantly reduced when they are strong. In case non-local correlations are weak to moderate as for SrVO$_3$, one-shot calculations are sufficient.

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preprint2020arXiv

Statistical error estimates in dynamical mean-field theory and extensions thereof

We employ the jackknife algorithm to analyze the propagation of the statistical quantum Monte Carlo error through the Bethe--Salpeter equation. This allows us to estimate the error of dynamical mean-field theory calculations of the susceptibility and of dynamical vertex approximation calculations of the self-energy. We find that the different frequency components of the susceptibility are uncorrelated, whereas those of the self-energy are correlated. For improving the quality of the correlation matrix taking sufficiently many jackknife bins is key, while for reducing the standard error of the mean sufficiently many Monte Carlo measurements are necessary. We furthermore show that even in the case of the self-energy, the finite covariance does not have a sizable influence on the analytic continuation.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

The AbinitioD$Γ$A Project v1.0: Non-local correlations beyond and susceptibilities within dynamical mean-field theory

The ab initio extension of the dynamical vertex approximation (D$Γ$A) method allows for realistic materials calculations that include non-local correlations beyond $GW$ and dynamical mean-field theory. Here, we discuss the AbinitioD$Γ$A algorithm, its implementation and usage in detail, and make the program package available to the scientific community.

0 citations0 reviewsNo code linkedOpen access