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Matthew F. Doty

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cond-mat.mtrl-sci quant-ph cond-mat.mes-hall cond-mat.str-el

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preprint2026arXiv

Quantifying the Relationship Between Strain and Bandgap in Thin Ga$_2$Se$_2$

We present a rigorous analysis that combines theory, simulation, and experimental measurements to quantify the relationship between strain and bandgap in two dimensional gallium selenide (Ga$_2$Se$_2$). Experimentally, we transfer thin Ga$_2$Se$_2$ flakes onto patterned substrates to deterministically induce multiaxial localized strain. We quantify the local strain using a combination of atomic force microscopy (AFM) measurements and COMSOL Multiphysics simulation. We then experimentally map the strain-induced bandgap shifts using high-resolution hyperspectral PL imaging to generate a robust and statistically significant dataset. We systematically fit this data to extract gauge factors that relate the bandgap shift to the local uniaxial and biaxial strain. We then compute the uniaxial and biaxial strain gauge factors via density functional theory (DFT) and find excellent agreement with the experimentally-determined values. Finally, we show that a simple model that computes bandgap shifts from the local uniaxial and biaxial strain predicts the observed multiaxial bandgap shift with less than 10\% error. The combined results provide a framework for deterministic realization of tailored bandgap profiles induced by controlled strain applied to Ga$_2$Se$_2$, with implications for the future realization of localized quantum emitters for quantum photonic applications.

preprint2022arXiv

Strong coupling between a topological insulator and a III-V heterostructure at terahertz frequency

We probe theoretically the emergence of strong coupling in a system consisting of a topological insulator (TI) and a III-V heterostructure using a numerical approach based on the scattering matrix formalism. Specifically, we investigate the interactions between terahertz excitations in a structure composed of Bi$_{2}$Se$_{3}$ and GaAs materials. We find that the interaction between the Bi$_{2}$Se$_{3}$ layer and AlGaAs/GaAs quantum wells with intersubband transitions (ISBTs) in the terahertz frequency regime creates new hybrid modes, namely Dirac plasmon-phonon-ISBT polaritons. The formation of these hybrid modes results in anti-crossings (spectral mode splitting) whose magnitude is an indication of the strength of the coupling. By varying the structural parameters of the constituent materials, our numerical calculations reveal that the magnitude of splitting depends strongly on the doping level and the scattering rate in the AlGaAs/GaAs quantum wells, as well as on the thickness of the GaAs spacer layer that separates the quantum-well structure from the TI layer. Our results reveal the material and device parameters required to obtain experimentally-observable signatures of strong coupling. Our model includes the contribution of an extra two-dimensional hole gas (2DHG) that is predicted to arise at the Bi$_{2}$Se$_{3}$/GaAs interface, based on density functional theory (DFT) calculations that explicitly account for details of the atomic terminations at the interface. The presence of this massive 2DHG at the TI/III-V interface shifts the dispersion of the Dirac plasmon-ISBT polaritons to higher frequencies. The damping rate at this interface, in contrast, compensates the effect of the 2DHG. Finally, we observe that the phonon resonances in the TI layer are crucial to the coupling between the THz excitations in the TI and III-V materials.

preprint2022arXiv

Surface plasmon-phonon-magnon polariton in a topological insulator-antiferromagnetic bilayer structure

We present a robust technique for computationally studying surface polariton modes in hybrid materials. We use a semi-classical model that allows us to understand the physics behind the interactions between collective excitations of the hybrid system and develop a scattering and transfer matrix method that imposes the proper boundary conditions to solve Maxwell equations and derive a general equation describing the surface polariton in a heterostructure consisting of N constituent materials. We apply this method to a test structure composed of a topological insulator (TI) and an antiferromagnetic material (AFM) to study the resulting surface Dirac plasmon-phonon-magnon polariton (DPPMP). We find that interactions between the excitations of the two constituents result in the formation of hybridized modes and the emergence of avoided-crossing points in the dispersion relations for the DPPMP. For the specific case of a Bi2Se3 TI material, the polariton branch with low frequency below 2 THz redshifts upon increasing the thickness of TI thin film, which leads to an upper bound on the thickness of the TI layer that will allow an observable signature of strong coupling and the emergence of hybridized states. We also find that the strength of the coupling between the TI and the AFM, which is parameterized by the amplitude of the avoided-crossing splitting between the two polariton branches at the magnon resonance frequency, depends on the magnitude of the magnetic dipole and the line width of the magnon in the AFM material as well as on the Fermi energy of Dirac plasmon in the TI. Finally, we predict that materials with extremely high quality, i.e. low scattering loss rate, are essential to achieve an experimentally-observable strong coupling between a TI and AFM.

preprint2020arXiv

Electronic Structure and Small Hole Polarons in YTiO3

As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior, with an activation energy of ~ 0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory (DFT) calculations. Hard X-ray photoelectron spectroscopy measurements (HAXPES) show the lower Hubbard band (LHB) at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence (PL) measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

preprint2019arXiv

Investigation of spin orbit torque driven dynamics in ferromagnetic heterostructures

We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) spin orbit torque (SOT) dominates the amplitude of the first oscillation cycle of the magnetization precession and the damping-like (DL) torque determines the final steady-state magnetization. In our bilayer samples, we have extracted the effective fields, hFL and hDL, of the two SOTs from the time-resolved magnetization oscillation spectrum. The extracted values are in good agreement with those extracted from time-integrated DCMOKE measurements, suggesting that the SOTs do not change at high frequencies. We also find that the amplitude ratio of the first oscillation to steady state is linearly proportional to the ratio hFL/hDL. The first oscillation amplitude is inversely proportional to, whereas the steady state value is independent of, the applied external field along the current direction.

preprint2012arXiv

Scalable qubit architecture based on holes in quantum dot molecules

Spins confined in quantum dots are a leading candidate for solid-state quantum bits that can be coherently controlled by optical pulses. There are, however, many challenges to developing a scalable multibit information processing device based on spins in quantum dots, including the natural inhomogeneous distribution of quantum dot energy levels, the difficulty of creating all-optical spin manipulation protocols compatible with nondestructive readout, and the substantial electron-nuclear hyperfine interaction-induced decoherence. Here, we present a scalable qubit design and device architecture based on the spin states of single holes confined in a quantum dot molecule. The quantum dot molecule qubit enables a new strategy for optical coherent control with dramatically enhanced wavelength tunability. The use of hole spins allows the suppression of decoherence via hyperfine interactions and enables coherent spin rotations using Raman transitions mediated by a hole-spin-mixed optically excited state. Because the spin mixing is present only in the optically excited state, dephasing and decoherence are strongly suppressed in the ground states that define the qubits and nondestructive readout is possible. We present the qubit and device designs and analyze the wavelength tunability and fidelity of gate operations that can be implemented using this strategy. We then present experimental and theoretical progress toward implementing this design.