BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Matthew F. Chisholm

Matthew F. Chisholm appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-ph

Catalog footprint

What is connected

12works
5topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

12 published item(s)

preprint2020arXiv

Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototyping emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with the expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pulsed-laser epitaxy of metallic delafossite PdCrO$_2$ films

Alternate stacking of a highly conducting metallic layer with a magnetic triangular layer found in delafossite PdCrO2 provides an excellent platform for discovering intriguing correlated quantum phenomena. Thin film growth of the material may enable not only tuning the basic physical properties beyond what bulk materials can exhibit, but also developing novel hybrid materials by interfacing with dissimilar materials, yet this has proven to be extremely challenging. Here, we report the epitaxial growth of metallic delafossite PdCrO2 films by pulsed laser epitaxy (PLE). The fundamental role of the PLE growth conditions, epitaxial strain, and chemical and structural characteristics of the substrate is investigated by growing under various growth conditions and on various types of substrates. While strain plays a large role in improving the crystallinities, the direct growth of epitaxial PdCrO2 films without impurity phases was not successful. We attribute this difficulty to both the chemical and structural dissimilarities between the substrates and volatile nature of PdO layer, which make nucleation of the right phase difficult. This difficulty was overcome by growing CuCrO2 buffer layers before PdCrO2 were grown. Unlike PdCrO2, CuCrO2 films were rather readily grown with a relatively wide growth window. Only monolayer thick buffer layer was sufficient to grow the correct PdCrO2 phase. This result indicates that the epitaxy of Pd-based delafossites is extremely sensitive to the chemistry and structure of the interface, necessitating near perfect substrate materials. The resulting films are commensurately strained and show an antiferromagnetic transition at 40 K that persists down to as thin as 3.6 nm in thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces

Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial interfaces with NiO to explore the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the plaguing dead layer problem in LSMO and leads to strongly directional conductivity, as manifested by more than three orders of magnitude difference between out-of-plane to in-plane conductivity. Comprehensive structural characterization and transport measurements reveal that this emerging behavior is related to a compositional change produced by directional cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electric conductivity at vertical epitaxial interfaces and establishes an effective route for engineering nanoscale electron transport for oxide electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Symmetry-driven atomic rearrangement at a brownmillerite-perovskite interface

Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped out the interfacial connectivity of atoms of two dissimilar materials, the perovskite SrTiO3 and the brownmillerite SrCoO2.5, using high resolution scanning transmission electron microscopy and geometric phase analysis. We observed unique symmetry-mismatch driven atomic displacements restricted to only the first few atomic layers, which can critically modify the properties of the system. Provided that SrCoO2.5 is a promising energy material due to its open framework structure, the improved understanding of the interfacial structure on the atomic level can lead to the rational design of novel oxide heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Orbital occupancy and charge doping in iron-based superconductors

Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various doping mechanisms. In FBS materials this is complicated immensely by the different crystal and magnetic structures exhibited by the different families. In this paper, using aberration-corrected scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS), we observe a universal behavior in the hole concentration and magnetic moment across different families. All the parent materials have the same total number of electrons in the Fe 3d bands; however, the local Fe magnetic moment varies due to different orbital occupancy. Although the common understanding has been that both long-range and local magnetic moments decrease with doping, we find that, near the onset of superconductivity, the local magnetic moment increases and shows a dome-like maximum near optimal doping, where no ordered magnetic moment is present. In addition, we address a longstanding debate concerning how Co substitutions induces superconductivity in the 122 arsenide family, showing that the 3d band filling increases a function of doping. These new microscopic insights into the properties of FBS demonstrate the importance of spin fluctuations for the superconducting state, reveal changes in orbital occupancy among different families of FBS, and confirm charge doping as one of the mechanisms responsible for superconductivity in 122 arsenides.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Orienting oxygen vacancies for fast catalytic reaction

Catalysis is indispensable to chemical processes and relevant to many aspects of modern life. Owing to the intriguing electronic structures and good ionic properties, multivalent transition metal oxides have attracted attention as key catalysts for various energy and environmental applications. Here, we demonstrate that brownmillerite strontium cobaltite (SrCoO2.5) can be a good cathode material for sold oxide fuel cells and rechargeable batteries due to the open oxygen frameworks. When the orientation of oxygen vacancy channels (OVCs) is properly controlled, one can drastically increase the surface oxygen exchange rate approximately up to two orders of magnitude. The improved oxygen reduction kinetics is attributed to a substantial decrease in the thermal activation energy. Importantly, the strong enhancement of crystallographic orientation-dependent oxygen reduction reaction required the creation of neither structural disorders nor chemical doping. Thus, our epitaxial approach can pave a novel pathway to providing precise interpretation of oxygen reduction reactions and to developing oxide-based energy materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge

Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here, we report a significant lowering of the redox temperature by epitaxial stabilization of strontium cobaltites (SrCoOx) grown directly as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5. Importantly, these two phases can be reversibly switched at a remarkably reduced temperature (200~300 °C) in a considerably short time (< 1 min) without destroying the parent framework. The fast, low temperature redox activity in SrCoO3-δ is attributed to a small Gibbs free energy difference between two topotatic phases. Our findings thus provide useful information for developing highly sensitive electrochemical sensors and low temperature cathode materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in shaping a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Wide band gap tunability in complex transition metal oxides by site-specific substitution

Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Atomic-scale compensation phenomena at polar interfaces

The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.

0 citations0 reviewsNo code linkedOpen access