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Matteo Calandra

Matteo Calandra contributes to research discovery and scholarly infrastructure.

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Published work

12 published item(s)

preprint2022arXiv

Theory of ultrafast magnetization of non-magnetic semiconductors with localized conduction bands

The magnetization of a non-magnetic semiconductor by femtosecond light pulses is crucial to achieve an all-optical control of the spin dynamics in materials and to develop faster memory devices. However, the conditions for its detection are largely unknown. In this work we identify the criteria for the observation of ultrafast magnetization and critically discuss the difficulties hindering its experimental detection. We show that ultrafast magnetization of a non magnetic semiconductor can be observed in compounds with very localized conduction band states and more delocalized valence bands, such as in the case of a p-d charge transfer gap. By using constrained and time dependent density functional theory simulations, we demonstrate that a transient ferrimagnetic state can be induced in diamagnetic semiconductor V2O5 via ultrafast pulses at realistic fluences. The ferrimagnetic state has opposite magnetic moments on vanadium (conduction) and oxygen (valence) states. Our methodology outruns the case of V2O5 as it identifies the key requirements for a computational screening of ultrafast magnetism in non-magnetic semiconductors.

preprint2021arXiv

Ab-initio energetics of graphite and multilayer graphene: stability of Bernal versus rhombohedral stacking

There has been a lot of excitement around the observation of superconductivity in twisted bilayer graphene, associated to flat bands close to the Fermi level. Such correlated electronic states also occur in multilayer rhombohedral stacked graphene (RG), which has been receiving increasing attention in the last years. In both natural and artificial samples however, multilayer stacked Bernal graphene (BG) occurs more frequently, making it desirable to determine what is their relative stability and under which conditions RG might be favored. Here, we study the energetics of BG and RG in bulk and also multilayer stacked graphene using first-principles calculations. It is shown that the electronic temperature, not accounted for in previous studies, plays a crucial role in determining which phase is preferred. We also show that the low energy states at room temperature consist of BG, RG and mixed BG-RG systems with a particular type of interface. Energies of all stacking sequences (SSs) are calculated for N = 12 layers, and an Ising model is used to fit them, which can be used for larger N as well. In this way, the ordering of low energy SSs can be determined and analyzed in terms of a few parameters. Our work clarifies inconsistent results in the literature, and sets the basis to studying the effect of external factors on the stability of multilayer graphene systems in first principles calculations.

preprint2021arXiv

Electronic structure of TiSe$_2$ from a quasi-self-consistent G$_0$W$_0$ approach

In a previous work it was shown that the inclusion of exact exchange is essential for a first principles description of both the electronic- and the vibrational properties of TiSe$_2$, M. Hellgren et al. [Phys. Rev. Lett. 119, 176401 (2017)]. The $GW$ approximation provides a parameter-free description of screened exchange but is usually employed perturbatively ($G_0W_0$) making results more or less dependent on the starting point. In this work, we develop a quasi-self-consistent extension of $G_0W_0$ based on the random phase approximation (RPA) and the optimized effective potential of hybrid density functional theory. This approach generates an optimal $G_0W_0$ starting-point and a hybrid exchange parameter consistent with the RPA. While self-consistency plays a minor role for systems such as Ar, BN and ScN, it is shown to be crucial for TiS$_2$ and TiSe$_2$. We find the high-temperature phase of TiSe$_2$ to be a semi-metal with a band structure in good agreement with experiment. Furthermore, the optimized hybrid functional agrees well with our previous estimate and therefore accurately reproduces the low-temperature charge density wave phase.

preprint2020arXiv

Black metal hydrogen above 360 GPa driven by proton quantum fluctuations

Production of metallic hydrogen is one of the top three open quests of physics. Recent low-temperature experiments report different metallization pressures, varying from 360GPa to 490GPa. In this work, we simulate structural properties, vibrational Raman, IR and optical spectra of hydrogen phase III accounting for proton quantum effects. We demonstrate that nuclear quantum fluctuations downshift the vibron frequencies by 25%, introduce a broad line-shape in the Raman spectra, and reduce the optical gap by 3eV. We show that hydrogen metallization occurs at 380GPa in phase III due to band overlap, in good agreement with transport data. By simulating the optical properties, we predict this state to be a peculiar black metal, transparent in the IR. The transparent window closes at 450GPa, but the reflectivity remains low, discarding phase III as the shiny metal observed at 490GPa. We predict the conductivity onset to increase by 70GPa and the transparent window to increase by 1.3eV when replacing hydrogen by deuterium at 0K, underlining that metallization is driven by quantum fluctuations and is thus isotope dependent. We show how hydrogen acquires metallic features (conductivity and brightness) at different pressures, explaining the apparent contradictions in existing experimental scenarios.

preprint2020arXiv

Electronic structure of pristine and Ni-substituted LaFeO$_3$ from near edge x-ray absorption fine structure experiments and first-principles simulations

We present a joint theoretical and experimental study of the oxygen $K$-edge spectra for LaFeO$_3$ and homovalent Ni-substituted LaFeO$_3$ (LaFe$_{0.75}$Ni$_{0.25}$O$_3$), using first-principles simulations based on density-functional theory with extended Hubbard functionals and x-ray absorption near edge structure (XANES) measurements. Ground-state and excited-state XANES calculations employ Hubbard on-site $U$ and inter-site $V$ parameters determined from first principles and the Lanczos recursive method to obtain absorption cross sections, which allows for a reliable description of XANES spectra in transition-metal compounds in a very broad energy range, with an accuracy comparable to that of hybrid functionals but at a substantially lower cost. We show that standard gradient-corrected exchange-correlation functionals fail in capturing accurately the electronic properties of both materials. In particular, for LaFe$_{0.75}$Ni$_{0.25}$O$_3$ they do not reproduce its semiconducting behaviour and provide a poor description of the pre-edge features at the O $K$ edge. The inclusion of Hubbard interactions leads to a drastic improvement, accounting for the semiconducting ground state of LaFe$_{0.75}$Ni$_{0.25}$O$_3$ and for a good agreement between calculated and measured XANES spectra. We show that the partial substitution of Fe for Ni affects the conduction-band bottom by generating a strongly hybridized O($2p$)-Ni($3d$) minority-spin empty electronic state. The present work, based on a consistent correction of self-interaction errors, outlines the crucial role of extended Hubbard functionals to describe the electronic structure of complex transition-metal oxides such as LaFeO$_3$ and LaFe$_{0.75}$Ni$_{0.25}$O$_3$ and paves the way to future studies on similar systems.

preprint2020arXiv

Hybrid-functional electronic structure of multilayer graphene

Multilayer graphene with rhombohedral and Bernal stacking are supposed to be metallic, as predicted by density functional theory calculations using semi-local functionals. However recent angular resolved photoemission and transport data have questioned this point of view. In particular, rhombohedral flakes are suggested to be magnetic insulators. Bernal flakes composed of an even number of layers are insulating, while those composed of an odd number of layers are pseudogapped. Here, by systematically benchmarking with plane waves codes, we develop very accurate all-electron Gaussian basis sets for graphene multilayers. We find that, in agreement with our previous calculations, rhombohedral stacked multilayer graphene are gapped for and magnetic. However, the valence band curvature and the details of the electronic structure depend crucially on the basis set. Only substantially extended basis sets are able to correctly reproduce the effective mass of the valence band top at the K point, while the popular POB-TZVP basis set leads to a severe overestimation. In the case of Bernal stacking, we show that exact exchange gaps the flakes composed by four layers and opens pseudogaps for N = 3, 6, 7, 8. However, the gap or pseudogap size and its behaviour as a function of thickness are not compatible with experimental data. Moreover, hybrid functionals lead to a metallic solution for 5 layers and a magnetic ground state for 5, 6 and 8 layers. Magnetism is very weak with practically no effect on the electronic structure and the magnetic moments are mostly concentrated in the central layers. Our hybrid functional calculations on trilayer Bernal graphene multilayers are in excellent agreement with non-magnetic GW calculations. For thicker multilayers, our calculations are a benchmark for manybody theoretical modeling of the low energy electronic structure.

preprint2020arXiv

Long-range rhombohedral-stacked graphene through shear

The discovery of superconductivity and correlated electronic states in the flat bands of twisted bilayer graphene has raised a lot of excitement. Flat bands also occur in multilayer graphene flakes that present rhombohedral (ABC) stacking order on many consecutive layers. Although Bernal-stacked (AB) graphene is more stable, long-range ABC-ordered flakes involving up to 50 layers have been surprisingly observed in natural samples. Here we present a microscopic atomistic model, based on first-principles density functional theory calculations, that demonstrates how shear stress can produce long-range ABC order. A stress-angle phase diagram shows under which conditions ABC-stacked graphene can be obtained, providing an experimental guide for its synthesis.

preprint2020arXiv

Phonon collapse and van der Waals melting of the 3D charge density wave of VSe$_2$

Among transition metal dichalcogenides (TMDs), VSe$_2$ is considered to develop a purely 3-dimensional (3D) charge-density wave (CDW) at T$_{CDW}$=110 K. Here, by means of high resolution inelastic x-ray scattering (IXS), we show that the CDW transition is driven by the collapse of an acoustic mode at the critical wavevector \textit{q}$_{CDW}$= (2.25 0 0.7) r.l.u. and critical temperature T$_{CDW}$=110 K. The softening of this mode starts to be pronounced for temperatures below 2$\times$ T$_{CDW}$ and expands over a rather wide region of the Brillouin zone, suggesting a large contribution of the electron-phonon interaction to the CDW formation. This interpretation is supported by our first principles calculations that determine a large momentum-dependence of the electron-phonon interaction, peaking at the CDW wavevector, in the presence of nesting. Fully anharmonic {\it ab initio} calculations confirm the softening of one acoustic branch at \textit{q}$_{CDW}$ as responsible for the CDW formation and show that van der Waals interactions are crucial to melt the CDW. Our work also highlights the important role of out-of-plane interactions to describe 3D CDWs in TMDs.

preprint2020arXiv

Theory of the thickness dependence of the charge density wave transition in 1T-TiTe$_2$

Most metallic transition metal dichalcogenides undergo charge density wave (CDW) instabilities with similar or identical ordering vectors in bulk and in single layer, albeit with different critical temperatures. Metallic 1T-TiTe$_2$ is a remarkable exception as it shows no evidence of charge density wave formation in bulk, but it displays a stable $2\times2$ reconstruction in single-layer form. The mechanism for this 3D-2D crossover of the transition is still unclear, although strain from the substrate and the exchange interaction have been pointed out as possible formation mechanisms. Here, by performing non-perturbative anharmonic calculations with gradient corrected and hybrid functionals, we explain the thickness behaviour of the transition in 1T-TiTe$_2$. We demonstrate that the occurrence of the CDW in single-layer TiTe$_2$ occurs from the interplay of non-perturbative anharmonicity and an exchange enhancement of the electron-phonon interaction, larger in the single layer than in the bulk. Finally, we study the electronic and structural properties of the single-layer CDW phase and provide a complete description of its electronic structure, phonon dispersion as well as infrared and Raman active phonon modes.

preprint2020arXiv

Thermal conductivity of Bi$_2$Se$_3$ from bulk to thin films: theory and experiment

We calculate the lattice-driven in-plane $(κ_{\parallel})$ and out-of-plane $(κ_{\perp})$ thermal conductivities of Bi$_2$Se$_3$ bulk, and of films of different thicknesses, using the Boltzmann equation with phonon scattering times obtained from anharmonic third order density functional perturbation theory. We compare our results for the lattice component of the thermal conductivity with published data for $κ_{\parallel}$ on bulk samples and with our room-temperature thermoreflectance measurements of $κ_{\perp}$ on films of thickness (L) ranging from 18~nm to 191~nm, where the lattice component has been extracted via the Wiedemann-Franz law. Ab-initio theoretical calculations on bulk samples, including an effective model to account for finite sample thickness and defect scattering, compare favorably both for the bulk case (from literature) and thin films (new measurements). In the low-T limit the theoretical in-plane lattice thermal conductivity of bulk Bi$_2$Se$_3$ agrees with previous measurements by assuming the occurrence of intercalated Bi$_2$ layer defects. The measured thermal conductivity monotonically decreases by reducing $L$, its value is $κ_{\perp}\approx 0.39\pm 0.08$~W/m$\cdot$K for $L=18$ nm and $κ_{\perp}=0.68\pm0.14$~W/m$\cdot$K for $L=191$ nm. We show that the decrease of room-temperature $κ_{\perp}$ in Bi$_2$Se$_3$ thin films as a function of sample thickness can be explained by the incoherent scattering of out-of-plane momentum phonons with the film surface. Our work outlines the crucial role of sample thinning in reducing the out-of-plane thermal conductivity.

preprint2020arXiv

Weak Dimensionality Dependence and Dominant Role of Ionic Fluctuations in the Charge-Density-Wave Transition of NbSe$_2$

Contradictory experiments have been reported about the dimensionality effect on the charge-density-wave transition in 2H NbSe$_2$. While scanning tunnelling experiments on single layers grown by molecular beam epitaxy measure a charge-density-wave transition temperature in the monolayer similar to the bulk, around 33 K, Raman experiments on exfoliated samples observe a large enhancement of the transition temperature up to 145 K. By employing a non-perturbative approach to deal with anharmonicity, we calculate from first principles the temperature dependence of the phonon spectra both for bulk and monolayer. In both cases, the charge-density-wave transition temperature is estimated as the temperature at which the phonon energy of the mode driving the structural instability vanishes. The obtained transition temperature in the bulk is around 59 K, in rather good agreement with experiments, and it is just slightly increased in the single-layer limit to 73 K, showing the weak dependence of the transition on dimensionality. Environmental factors could motivate the disagreement between the transition temperatures reported by experiments. Our analysis also demonstrates the predominance of ionic fluctuations over electronic ones in the melting of the charge-density-wave order.

preprint2019arXiv

Quantum Crystal Structure in the 250 K Superconducting Lanthanum Hydride

The discovery of superconductivity at 200 K in the hydrogen sulfide system at large pressures [1] was a clear demonstration that hydrogen-rich materials can be high-temperature superconductors. The recent synthesis of LaH$_{10}$ with a superconducting critical temperature (T$_{\text{c}}$) of 250 K [2,3] places these materials at the verge of reaching the long-dreamed room-temperature superconductivity. Electrical and x-ray diffraction measurements determined a weakly pressure-dependent T$_{\text{c}}$ for LaH$_{10}$ between 137 and 218 gigapascals in a structure with a face-centered cubic (fcc) arrangement of La atoms [3]. Here we show that quantum atomic fluctuations stabilize in all this pressure range a high-symmetry Fm-3m crystal structure consistent with experiments, which has a colossal electron-phonon coupling of $λ\sim3.5$. Even if ab initio classical calculations neglecting quantum atomic vibrations predict this structure to distort below 230 GPa yielding a complex energy landscape with many local minima, the inclusion of quantum effects simplifies the energy landscape evidencing the Fm-3m as the true ground state. The agreement between the calculated and experimental T$_{\text{c}}$ values further supports this phase as responsible for the 250 K superconductivity. The relevance of quantum fluctuations in the energy landscape found here questions many of the crystal structure predictions made for hydrides within a classical approach that at the moment guide the experimental quest for room-temperature superconductivity [4,5,6]. Furthermore, quantum effects reveal crucial to sustain solids with extraordinary electron-phonon coupling that may otherwise be unstable [7].