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Researcher profile

Matt W. Graham

Matt W. Graham contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.chem-ph

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Published work

6 published item(s)

preprint2022arXiv

High symmetry anthradithiophene molecular packing motifs promote thermally-activated singlet fission

When considering the optimal molecular packing to realize charge multiplication in organic photovoltaic materials, subtle changes in intermolecular charge transfer (CT) coupling can strongly modulate singlet fission. To understand why certain packing morphologies are more conducive to charge multiplication by triplet pair (TT) formation, we measure the diffraction-limited transient absorption (TA) response from four single-crystal functionalized derivatives of fluorinated anthradithiophene: diF R-ADT (R = TES, TSBS, TDMS, TBDMS). diF TES-ADT and diF TDMS-ADT both exhibit 2D brickwork packing structures, diF TSBS-ADT adopts a 1D sandwich-herringbone packing structure, and diF TBDMS-ADT exhibits a 1D twisted-columnar packing structure. When brickwork or twisted-columnar single crystals are resonantly probed parallel to their charge transfer (CT)-axis projections, the TA signal is dominated by a rising component on the picosecond timescale (rate $k_{TT}$) attributed to TT state population. When probed orthogonal to the CT-axis, we instead recover the falling TA kinetics of singlet state depletion at rate, $k_{A}$. The rising to falling rate ratio estimates the TT formation efficiency, $ε_{TT}$ = $k_{TT}/k_A$ relative to exciton self-trapping. $ε_{TT}$ ranged from near unity in diF TES-ADT to 84% in diF TDMS-ADT. Interestingly, diF TSBS-ADT crystals only manifest falling kinetics of CT-mediated self-trapping and singlet state depletion. Singlet fission is prohibitive in diF TSBS-ADT crystals owing to its lower symmetry sandwich herringbone packing that leads to $S_1$ to CT-state energy separation that is ~3x larger than in other packings. Collectively, these results highlight optimal packing configurations that either enhance or completely suppress CT-mediated TT-pair formation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hydrogen incorporation into amorphous indium gallium zinc oxide thin-film transistors

Within the subgap of amorphous oxide semiconductors like amorphous indium gallium zinc oxide (a-IGZO) are donor-like and acceptor-like states that control the operational physics of optically transparent thin-film transistors (TFTs). Hydrogen incorporation into the channel layer of a top-gate a-IGZO TFT exists as an electron donor that causes an observed negative shift in the drain current-gate voltage ($\mathrm{I_{D} - V_{G}}$) transfer curve turn-on voltage. Normally, hydrogen is thought to create shallow electronic states just below the conduction band mobility edge, with the donor ionization state controlled by equilibrium thermodynamics involving the position of the Fermi level with respect to the donor ionization energy. However, hydrogen does not behave as a normal donor as revealed by the subgap density of states (DoS) measured by the photoconduction response of top-gate a-IGZO TFTs to within 0.3 eV of the CBM edge. Specifically, the DoS shows a subgap peak above the valence band mobility edge growing at the same rate that $\mathrm{I_{D} - V_{G}}$ transfer curve measurements suggest that hydrogen was incorporated into the channel layer. Such hydrogen donor behavior in a-IGZO is anomalous and can be understood as follows: Non-bonded hydrogen ionization precedes its incorporation into the a-IGZO network as a bonded species. Ionized hydrogen bonds to a charged oxygen-on-an-oxygen-site anion, resulting in the formation of a defect complex denoted herein as, $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$. Formation of an $\mathrm{{[{O_{O}^{2-}}{H^+}]}^{1-}}$ defect complex creates a spectrally-broad ($\sim$0.3 eV FWHM) distribution of electronic states observed in the bandgap centered at 0.4 eV above the valence band mobility edge.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrabroadband Density of States of Amorphous In-Ga-Zn-O

The sub-gap density of states of amorphous indium gallium zinc oxide ($a$-IGZO) is obtained using the ultrabroadband photoconduction (UBPC) response of thin-film transistors (TFTs). Density functional theory simulations classify the origin of the measured sub-gap density of states peaks as a series of donor-like oxygen vacancy states and acceptor-like Zn vacancy states. Donor peaks are found both near the conduction band and deep in the sub-gap, with peak densities of $10^{17}-10^{18}$ cm$^{-3}$eV$^{-1}$. Two deep acceptor-like metal vacancy peaks with peak densities in the range of $10^{18}$ cm$^{-3}$eV$^{-1}$ and lie adjacent to the valance band Urbach tail region at 2.0 to 2.5 eV below the conduction band edge. By applying detailed charge balance, we show increasing the density of metal vacancy deep-acceptors strongly shifts the $a$-IGZO TFT threshold voltage to more positive values. Photoionization (h$ν$ > 2.0 eV) of metal vacancy acceptors is one cause of transfer curve hysteresis in $a$-IGZO TFTs owing to longer recombination lifetimes as they get captured into acceptor-like vacancies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse

Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($ε$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are unambiguously identified in otherwise complex kinetics. Both the U-PC and TA response of WSe$_2$ yield matching interlayer electronic escape times that accelerate from 1.6 ns to 86 ns with applied $E$-field to predict the maximum device PC-efficiency realized of $\sim$44\%. The slope of the escape rates versus $E$-field suggests out-of-plane electron and hole mobilities of 0.129 and 0.031 cm$^2$/V$s$ respectively. Above $\sim$10$^{11}$ photons/cm$^{2}$ incident flux, defect-assisted Auger scattering greatly decreases efficiency by trapping carriers at vacancy defects. Both TA and PC spectra identify a metal-vacancy sub-gap peak with $\sim$5.6 ns lifetime as a primary trap capturing carriers as they hop between layers. Synchronous TA and U-PC microscopy show the\ net PC collected is modelled by a kinetic rate-law of electronic escape competing against the linear and nonlinear Auger recombination rates. This simple rate-model further predicts the PC-based dynamics, nonlinear amplitude and efficiency, $ε$ over a 10$^5$ range of incident photon flux in few-layer WSe$_2$ and MoS$_2$ devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transient absorption and photocurrent microscopy show hot electron supercollisions describe the rate-limiting relaxation step in graphene

Using transient absorption (TA) microscopy as a hot electron thermometer we show disorder-assisted acoustic-phonon supercollisions (SCs) best describes the rate-limiting relaxation step in graphene over a wide range of lattice temperatures ($T_l=$5-300 K), Fermi energies ($E_F=\pm0.35$ eV), and optical probe energies (~0.3 - 1.1 eV). Comparison with simultaneously collected transient photocurrent, an independent hot electron thermometer, confirms the rate-limiting optical and electrical response in graphene are best described by the SC-heat dissipation rate model, $H=A(T^3_e- T^3_l)$. Our data further shows the electron cooling rate in substrate supported graphene is twice as fast as in suspended graphene sheets, consistent with SC-model prediction for disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Ultrafast Spectroscopy of Mid-Infrared Internal Exciton Transitions of Separated Single-Walled Carbon Nanotubes

We report a femtosecond mid-infrared study of the broadband low-energy response of individually separated (6,5) and (7,5) single-walled carbon nanotubes. Strong photoinduced absorption is observed around 200 meV, whose transition energy, oscillator strength, resonant chirality enhancement and dynamics manifest the observation of quasi-1D intra-excitonic transitions. A model of the nanotube 1s-2p cross section agrees well with the signal amplitudes. Our study further reveals saturation of the photoinduced absorption with increasing phase-space filling of the correlated e-h pairs.

0 citations0 reviewsNo code linkedOpen access