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Mathieu Pierre

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cond-mat.mes-hall cond-mat.str-el cond-mat.supr-con cond-mat.mtrl-sci quant-ph

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preprint2023arXiv

Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates

The interplay between dimensionality and various phases of matter is a central inquiry in condensed matter physics. New phases are often discovered through spontaneously broken symmetry. Understanding the dimensionality of superconductivity in the high-temperature cuprate analogue $-$ layered nickelates and revealing a new symmetry-breaking state are the keys to deciphering the underlying pairing mechanism. Here, we demonstrate the highly-tunable dimensionality and a broken rotational symmetry state in the superconductivity of square-planar layered nickelates. The superconducting state, probed by superconducting critical current and magnetoresistance within superconducting transition under direction-dependent in-plane magnetic fields, exhibits a $C_2$ rotational symmetry which breaks the $C_4$ rotational symmetry of the square-planar lattice. Furthermore, by performing detailed examination of the angular dependent upper critical fields at temperatures down to 0.5 K with high-magnetic pulsed-fields, we observe a crossover from two-dimensional to three-dimensional superconducting states which can be manipulated by the ionic size fluctuations in the rare-earth spacer layer. Such a large degree of controllability is desired for tailoring strongly two/three-dimensional superconductors and navigating various pairing landscapes for a better understanding of the correlation between reduced dimensionality and unconventional pairing. These results illuminate new directions to unravel the high-temperature superconducting pairing mechanism.

preprint2016arXiv

High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3

Transport properties of the complex oxide LaAlO3/SrTiO3 interface are investigated under high magnetic field (55T). By rotating the sample with respect to the magnetic field, the two-dimensional nature of charge transport is clearly established. Small oscillations of the agnetoresistance with altered periodicity are observed when plotted versus inverse magnetic field. We attribute this effect to Rashba spin-orbit coupling which remains consistent with large negative magnetoresistance when the field is parallel to the sample plane. A large inconsistency between the carrier density extracted from Shubnikov-de Haas analysis and from the Hall effect is explained by the contribution to transport of at least two bands with different mobility.

preprint2014arXiv

Storage and on-demand release of microwaves using superconducting resonators with tunable coupling

We present a system which allows to tune the coupling between a superconducting resonator and a transmission line. This storage resonator is addressed through a second, coupling resonator, which is frequency-tunable and controlled by a magnetic flux applied to a superconducting quantum interference device (SQUID). We experimentally demonstrate that the lifetime of the storage resonator can be tuned by more than three orders of magnitude. A field can be stored for 18 μs when the coupling resonator is tuned off resonance and it can be released in 14 ns when the coupling resonator is tuned on resonance. The device allows capture, storage, and on-demand release of microwaves at a tunable rate.

preprint2011arXiv

Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realisation of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances towards the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.