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Researcher profile

Masao Arai

Masao Arai contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

7 published item(s)

preprint2021arXiv

First-principles calculations of phonon transport across a vacuum gap

Phonon transport across a vacuum gap separating intrinsic silicon crystals is predicted via the atomistic Green's function method combined with first-principles calculations of all interatomic force constants. The overlap of electron wave functions in the vacuum gap generates weak covalent interaction between the silicon surfaces, thus creating a pathway for phonons. Phonon transport, dominated by acoustic modes, exceeds near-field radiation for vacuum gaps smaller than ~ 1 nm. The first-principles-based approach proposed in this work is critical to accurately quantify the contribution of phonon transport to heat transfer in the extreme near field.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nearly Free Electron States in MXenes

Using a set of first-principles calculations, we studied the electronic structures of two-dimensional transition metal carbides and nitrides, so called MXenes, functionalized with F, O, and OH. Our projected band structures and electron localization function analyses reveal the existence of nearly free electron (NFE) states in variety of MXenes. The NFE states are spatially located just outside the atomic structure of MXenes and are extended parallel to the surfaces. Moreover, we found that the OH-terminated MXenes offer the NFE states energetically close to the Fermi level. In particular, the NFE states in some of the OH-terminated MXenes, such as Ti2C(OH)2, Zr2C(OH)2, Zr2N(OH)2, Hf2C(OH)2, Hf2N(OH)2, Nb2C(OH)2, and Ta2C(OH)2, are partially occupied. This is in remarkable contrast to graphene, graphane, and MoS2, in which their NFE states are located far above the Fermi level and thus they are unoccupied. As a prototype of such systems, we investigated the electron transport properties of Hf2C(OH)2 and found that the NFE states in Hf2C(OH)2 provide almost perfect transmission channels without nuclear scattering for electron transport. Our results indicate that these systems might find applications in nanoelectronic devices. Our findings provide new insights into the unique electronic band structures of MXenes.

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preprint2016arXiv

Topological insulators in ordered double transition metals M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes

The family of two-dimensional transition metal carbides, so called MXenes, has recently found new members with ordered double transition metals M$'_2$M$"$C$_2$, where M$'$ and M$"$ stand for transition metals. Here, using a set of first-principles calculations, we demonstrate that some of the newly added members, oxide M$'_2$M$"$C$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) MXenes, are topological insulators. The nontrivial topological states of the predicted MXenes are revealed by the $Z_2$ index, which is evaluated from the parities of the occupied bands below the Fermi energy at time reversal invariant momenta, and also by the presence of the edge states. The predicted M$'_2$M$"$C$_2$O$_2$ MXenes show nontrivial gaps in the range of 0.041 -- 0.285 eV within the generalized gradient approximation and 0.119 -- 0.409 eV within the hybrid functional. The band gaps are induced by the spin-orbit coupling within the degenerate states with $d_{x^2-y^2}$ and $d_{xy}$ characters of M$'$ and M$"$, while the band inversion occurs at the $Γ$ point among the degenerate $d_{x^2-y^2}$/$d_{xy}$ orbitals and a non-degenerate $d_{3z^2-r^2}$ orbital, which is driven by the hybridization of the neighboring orbitals. The phonon dispersion calculations find that the predicted topological insulators are structurally stable. The predicted W-based MXenes with large band gaps might be suitable candidates for many topological applications at room temperature. In addition, we study the electronic structures of thicker ordered double transition metals M$'_2$M$"_2$C$_3$O$_2$ (M$'$= Mo, W; M$"$= Ti, Zr, Hf) and find that they are nontrivial topological semimetals.

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preprint2015arXiv

A ferroelectric-like structural transition in a metal

Metals cannot exhibit ferroelectricity because static internal electric fields are screened by conduction electrons, but in 1965, Anderson and Blount predicted the possibility of a ferroelectric metal, in which a ferroelectric-like structural transition occurs in the metallic state. Up to now, no clear example of such a material has been identified. Here we report on a centrosymmetric (R-3c) to non-centrosymmetric (R3c) transition in metallic LiOsO3 that is structurally equivalent to the ferroelectric transition of LiNbO3. The transition involves a continuous shift in the mean position of Li+ ions on cooling below 140K. Its discovery realizes the scenario described by Anderson and Blount, and establishes a new class of materials whose properties may differ from those of normal metals.

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preprint2015arXiv

Large-Gap Two-Dimensional Topological Insulator in Oxygen Functionalized MXene

Two-dimensional (2D) topological insulator (TI) have been recognized as a new class of quantum state of matter. They are distinguished from normal 2D insulators with their nontrivial band-structure topology identified by the $Z_2$ number as protected by time-reversal symmetry (TRS). 2D TIs have intriguing spin-velocity locked conducting edge states and insulating properties in the bulk. In the edge states, the electrons with opposite spins propagate in opposite directions and the backscattering is fully prohibited when the TRS is conserved. This leads to quantized dissipationless "two-lane highway" for charge and spin transportation and promises potential applications. Up to now, only very few 2D systems have been discovered to possess this property. The lack of suitable material obstructs the further study and application. Here, by using first-principles calculations, we propose that the functionalized MXene with oxygen, M$_2$CO$_2$ (M=W, Mo and Cr), are 2D TIs with the largest gap of 0.194 eV in W case. They are dynamically stable and natively antioxidant. Most importantly, they are very likely to be easily synthesized by recent developed selective chemical etching of transition-metal carbides (MAX phase). This will pave the way to tremendous applications of 2D TIs, such as "ideal" conducting wire, multifunctional spintronic device, and the realization of topological superconductivity and Majorana modes for quantum computing.

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preprint2013arXiv

Infrared evidence of a Slater metal-insulator transition in NaOsO3

The magnetically driven metal-insulator transition (MIT) was predicted by Slater in the fifties. Here a long-range antiferromagnetic (AF) order can open up a gap at the Brillouin electronic band boundary regardless of the Coulomb repulsion magnitude. However, while many low-dimensional organic conductors display evidence for an AF driven MIT, in three-dimensional (3D) systems the Slater MIT still remains elusive. We employ terahertz and infrared spectroscopy to investigate the MIT in the NaOsO3 3D antiferromagnet. From the optical conductivity analysis we find evidence for a continuous opening of the energy gap, whose temperature dependence can be well described in terms of a second order phase transition. The comparison between the experimental Drude spectral weight and the one calculated through Local Density Approximation (LDA) shows that electronic correlations play a limited role in the MIT. All the experimental evidence demonstrates that NaOsO3 is the first known 3D Slater insulator.

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preprint2009arXiv

Numerical study of quantum Hall effect in two-dimensional multi-band system: single- and multi-layer graphene

The Chern numbers which correspond to quantized Hall conductance $σ_{xy}$ were calculated for single- and bi-layer honeycomb lattices. The quantization of $σ_{xy}$ occurs in entire energy range. Several large jumps of Chern numbers appear at van-Hove singularities of energy bands without magnetic fields. The plateauxof $σ_{xy}$ are discussed from semi-classical quantization.

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