Researcher profile

Martina Lihter

Martina Lihter contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

High-throughput nanopore fabrication and classification using FIB irradiation and automated pore edge analysis

Large-area nanopore drilling is a major bottleneck in state-of-the-art nanoporous 2D membrane fabrication protocols. In addition, high-quality structural and statistical descriptions of as-fabricated porous membranes are key to predicting the corresponding membrane-wide permeation properties. In this work, we investigate Xe-ion focused ion beam as a tool for scalable, large-area nanopore fabrication on atomically thin, free-standing molybdenum disulphide. The presented irradiation protocol enables designing ultrathin membranes with tunable porosity and pore dimension, along with spatial uniformity across large-area substrates. Fabricated nanoporous membranes were characterized using scanning transmission electron microscopy imaging and the observed nanopore geometries were analyzed through a pore-edge detection script. We further demonstrated that the obtained structural and statistical data can be readily passed on to computational and analytical tools to predict the permeation properties at both individual pore and membrane-wide scales. As an example, membranes featuring angstrom-scale pores were investigated in terms of their emerging water and ion flow properties through extensive all-atom molecular dynamics simulations. We believe that the combination of experimental and analytical approaches presented here should yield accurate physics-based property estimates and thus potentially enable a true function-by-design approach to fabrication for applications such as osmotic power generation, desalination/filtration, as well as their strain-tunable versions.

preprint2020arXiv

Electrochemical Surface Modification of a 2D MoS2 Semiconductor

The surface modification of 2D semiconducting materials, such as transition metal dichalcogenides (TMDCs), is becoming important for a diverse range of applications, such as biosensing, catalysis, energy generation and energy storage. Due to the chemical inertness of their basal plane, the surface modification of 2D TMDCs is mainly limited to their defective sites, or it requires a conversion of TMDC from its semiconducting into a metallic phase. In this work, we show that the basal plane of a 2D semiconductor molybdenum disulfide (MoS2) can be modified by electrochemical grafting of aryl-diazonium salt, such as 3,5-bis(trifluoromethyl)benzenediazonium tetrafluoroborate. To investigate the applicability of this method, we perform electrografting on MoS2 nanoribbons by addressing them individually via a different electrode. High spatial selectivity of this method on the nanoscale opens the possibility for specific surface modification of neighboring 2D layers and nanostructures that are contacted by electrodes. This method could be potentially applicable to other 2D semiconducting materials that are active in the same potential window in which the electrochemical reduction of aryl diazonium salts occurs.

preprint2020arXiv

Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides

Transition metal dichalcogenides (TMDs) represent an entire new class of semiconducting 2D materials with exciting properties. Defects in 2D TMDs can crucially affect their physical and chemical properties. However, characterization of the presence and spatial distribution of defects is limited either in throughput or in resolution. Here, we demonstrate large area mapping of reactive sulfur-deficient defects in 2D-TMDs coupling single-molecule localization microscopy with fluorescence labeling using thiol chemistry. Our method, reminiscent of PAINT strategies, relies on the specific binding by reversible physisorption of fluorescent probes to sulfur-vacancies via a thiol group and their intermittent emission to apply localization of the labeled defects with a precision down to 15 nm. Tuning the distance between the fluorophore and the docking thiol site allows us to control Föster Resonance Energy Transfer (FRET) process and reveal large structural defects such as grain boundaries and line defects, due to the local irregular lattice structure. Our methodology provides a simple and fast alternative for large-scale mapping of non-radiative defects in 2D materials and paves the way for in-situ and spatially resolved monitoring of the interaction between chemical agent and the defects in 2D materials that has general implications for defect engineering in aqueous condition.