Researcher profile

Martin Glaser

Martin Glaser contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Measuring structural parameters of crosslinked and entangled semiflexible polymer networks with single-filament tracing

Single-filament tracing has been a valuable tool to directly determine geometrical and mechanical properties of entangled polymer networks. However, systematically verifying how the stiffness of the tracer filament or its molecular interactions with the surrounding network impacts the measurement of these parameters has not been possible with the established experimental systems. Here, we use mechanically programmable DNA nanotubes embedded in crosslinked and entangled F-actin networks, as well as in synthetic DNA networks, in order to measure fundamental, structural network properties like tube width and mesh size with respect to the stiffness of the tracers. While we confirm some predictions derived from models based purely on steric interactions, our results indicate that these models should be expanded to account for additional inter-filament interactions, thus describing the behavior of real polymer networks.

preprint2017arXiv

Free-running Sn precipitates: an efficient phase separation mechanism for metastable GeSn epilayers

We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we observe that decomposition of metastable epilayers with Sn concentrations around 10% sets in above 230°C, the eutectic temperature of the Ge/Sn system. Time-resolved annealing experiments in a scanning electron microscope reveal the crucial role of liquid Sn droplets in this phase separation process. Driven by a gradient of the chemical potential, the Sn droplets move on the surface along preferential crystallographic directions, thereby taking up Sn and Ge from the strained GeSn layer at their leading edge. While Sn-uptake increases the volume of the melt, dissolved Ge becomes re-deposited by a liquid-phase epitaxial process at the trailing edge of the droplet. Secondary droplets are launched from the rims of the single-crystalline Ge trails into intact regions of the GeSn film, leading to an avalanche-like transformation front between the GeSn film and re-deposited Ge. This process makes phase separation of metastable GeSn layers particularly efficient at rather low temperatures.