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Markus Fras

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Published work

2 published item(s)

preprint2016arXiv

Optimisation of the Read-out Electronics of Muon Drift-Tube Chambers for Very High Background Rates at HL-LHC and Future Colliders

In the ATLAS Muon Spectrometer, Monitored Drift Tube (MDT) chambers and sMDT chambers with half of the tube diameter of the MDTs are used for precision muon track reconstruction. The sMDT chambers are designed for operation at high counting rates due to neutron and gamma background irradiation expected for the HL-LHC and future hadron colliders. The existing MDT read-out electronics uses bipolar signal shaping which causes an undershoot of opposite polarity and same charge after a signal pulse. At high counting rates and short electronics dead time used for the sMDTs, signal pulses pile up on the undershoot of preceding background pulses leading to a reduction of the signal amplitude and a jitter in the drift time measurement and, therefore, to a degradation of drift tube efficiency and spatial resolution. In order to further increase the rate capability of sMDT tubes, baseline restoration can be used in the read-out electronics to suppress the pile-up effects. A discrete bipolar shaping circuit with baseline restoration has been developed and used for reading out sMDT tubes under irradiation with a 24 MBq 90Sr source. The measurements results show a substantial improvement of the performance of the sMDT tubes at high counting rates.

preprint2016arXiv

Performance of the new amplifier-shaper-discriminator chip for the ATLAS MDT chambers at the HL-LHC

The Phase-II Upgrade of the ATLAS Muon Detector requires new electronics for the readout of the MDT drift tubes. The first processing stage, the Amplifier-Shaper-Discriminator (ASD), determines the performance of the readout for crucial parameters like time resolution, gain uniformity, efficiency and noise rejection. An 8-channel ASD chip, using the IBM 130 nm CMOS 8RF-DM technology, has been designed, produced and tested. The area of the chip is 2.2 x 2.9 square mm size. We present results of detailed measurements as well as a comparision with simulation results of the chip behaviour at three different levels of detail.