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Researcher profile

Marko J. Rančić

Marko J. Rančić contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-sciphysics.atom-phphysics.chem-phphysics.comp-ph

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Published work

4 published item(s)

preprint2023arXiv

Modelling Carbon Capture on Metal-Organic Frameworks with Quantum Computing

Despite the recent progress in quantum computational algorithms for chemistry, there is a dearth of quantum computational simulations focused on material science applications, especially for the energy sector, where next generation sorbing materials are urgently needed to battle climate change. To drive their development, quantum computing is applied to the problem of CO$_2$ adsorption in Al-fumarate Metal-Organic Frameworks. Fragmentation strategies based on Density Matrix Embedding Theory are applied, using a variational quantum algorithm as a fragment solver, along with active space selection to minimise qubit number. By investigating different fragmentation strategies and solvers, we propose a methodology to apply quantum computing to Al-fumarate interacting with a CO$_2$ molecule, demonstrating the feasibility of treating a complex porous system as a concrete application of quantum computing. Our work paves the way for the use of quantum computing techniques in the quest of sorbents optimisation for more efficient carbon capture and conversion applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

A comment on: Universal control of superexchange in linear triple quantum dots with an empty mediator

In a recent preprint arXiv:2203.15521 G. X. Chan, P. Huang, and X. Wang claim that triple-quantum dot superexchange in a (1, 0, 1) charge configuration exhibits a change of sign (going from positive to negative) as a function of middle dot detuning. Furthermore, their claim is that charge sweet-spots exist for specific values of the inter-dot detuning. Their analysis is based on the Hubbard model and something to what they refer to as the full Configuration-Interaction method. All of this findings were already reported by M. J. Rančić and G. Burkard in Ref. Phys. Rev. B 96, 201304(R) (2017) based on the Hubbard model. No reference to this manuscript was made in Ref. arXiv:2203.15521. I have asked the authors to urgently modify the pre-print and position their work with respect to the previously conducted study - which they rejected to do at the current moment, quoting that pp. it is not their style to modify preprints before they were accepted. This alongside with a very similar style of some figures lead me to the conclusion that they are deliberately misleading the scientific community and trying to adopt other peoples work and ideas as their own.

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preprint2022arXiv

Entangling spin and charge degrees of freedom in semiconductor quantum dots

In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.

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preprint2020arXiv

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.

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