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Christoph Kloeffel

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preprint2020arXiv

Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors

We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that is conserved even in highly anisotropic semiconductors, provided that the system has a twofold symmetry with respect to the direction of the applied magnetic field. This finding facilitates the definition of qubit basis states and simplifies the form of exchange interaction for two-qubit gates in coupled quantum dots. If the magnetic field is applied along a generic direction, cubic anisotropy terms act as an effective spin-orbit interaction introducing novel exchange couplings even for an inversion symmetric setup. Considering the example of a silicon nanowire double dot, we present the relative strength of these anisotropic exchange interaction terms and calculate the fidelity of the $\sqrt{\text{SWAP}}$ gate. Furthermore, we show that the anisotropy-induced spin-orbit effects can be comparable to that of the direct Rashba spin-orbit interaction for experimentally feasible electric field strengths.

preprint2020arXiv

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite towards the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, we report on the growth of Ge wires on pre-patterned Si (001) substrates with controllable position, distance, length and structure. This is achieved by a novel growth process which uses a SiGe strain-relaxation template and can be generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, capacitive coupling between closely spaced wires is observed, which underlines their potential as a host for implementing two qubit gates. The reported results open a path towards scalable qubit devices with Si compatibility.

preprint2016arXiv

Heavy hole states in Germanium hut wires

Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function which is of heavy hole character. A light hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors. However, this tiny light hole contribution does not influence the spin lifetimes, which are expected to be very long, even in non isotopically purified samples.

preprint2014arXiv

Acoustic phonons and strain in core/shell nanowires

We study theoretically the low-energy phonons and the static strain in cylindrical core/shell nanowires (NWs). Assuming pseudomorphic growth, isotropic media, and a force-free wire surface, we derive algebraic expressions for the dispersion relations, the displacement fields, and the stress and strain components from linear elasticity theory. Our results apply to NWs with arbitrary radii and arbitrary elastic constants for both core and shell. The expressions for the static strain are consistent with experiments, simulations, and previous analytical investigations; those for phonons are consistent with known results for homogeneous NWs. Among other things, we show that the dispersion relations of the torsional, longitudinal, and flexural modes change differently with the relative shell thickness, and we identify new terms in the corresponding strain tensors that are absent for uncapped NWs. We illustrate our results via the example of Ge/Si core/shell NWs and demonstrate that shell-induced strain has large effects on the hole spectrum of these systems.

preprint2014arXiv

Phonon-Mediated Decay of Singlet-Triplet Qubits in Double Quantum Dots

We study theoretically the phonon-induced relaxation ($T_1$) and decoherence times ($T_2$) of singlet-triplet qubits in lateral GaAs double quantum dots (DQDs). When the DQD is biased, Pauli exclusion enables strong dephasing via two-phonon processes. This mechanism requires neither hyperfine nor spin-orbit interaction and yields $T_2 \ll T_1$, in contrast to previous calculations of phonon-limited lifetimes. When the DQD is unbiased, we find $T_2 \simeq 2 T_1$ and much longer lifetimes than in the biased DQD. For typical setups, the decoherence and relaxation rates due to one-phonon processes are proportional to the temperature $T$, whereas the rates due to two-phonon processes reveal a transition from $T^2$ to higher powers as $T$ is decreased. Remarkably, both $T_1$ and $T_2$ exhibit a maximum when the external magnetic field is applied along a certain axis within the plane of the two-dimensional electron gas. We compare our results with recent experiments and analyze the dependence of $T_1$ and $T_2$ on system properties such as the detuning, the spin-orbit parameters, the hyperfine coupling, and the orientation of the DQD and the applied magnetic field with respect to the main crystallographic axes.

preprint2013arXiv

Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots

We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance, with spin-flip times shorter than 100 ps. Long-distance qubit-qubit coupling can be mediated by the cavity electric field of a superconducting transmission line resonator, where we show that operation times below 20 ns seem feasible for the entangling square-root-of-iSWAP gate. The absence of Dresselhaus spin-orbit interaction (SOI) and the presence of an unusually strong Rashba-type SOI enable precise control over the transverse qubit coupling via an externally applied, perpendicular electric field. The latter serves as an on-off switch for quantum gates and also provides control over the g factor, so single- and two-qubit gates can be operated independently. Remarkably, we find that idle qubits are insensitive to charge noise and phonons, and we discuss strategies for enhancing noise-limited gate fidelities.

preprint2013arXiv

Tunable g factor and phonon-mediated hole spin relaxation in Ge/Si nanowire quantum dots

We theoretically consider g factor and spin lifetimes of holes in a longitudinal Ge/Si core/shell nanowire quantum dot that is exposed to external magnetic and electric fields. For the ground states, we find a large anisotropy of the g factor which is highly tunable by applying electric fields. This tunability depends strongly on the direction of the electric field with respect to the magnetic field. We calculate the single-phonon hole spin relaxation times T1 for zero and small electric fields and propose an optimal setup in which very large T1 of the order of tens of milliseconds can be reached. Increasing the relative shell thickness or the longitudinal confinement length further prolongs T1. In the absence of electric fields, the dephasing vanishes and the decoherence time T2 is determined by T2 = 2 T1.

preprint2012arXiv

Prospects for Spin-Based Quantum Computing

Experimental and theoretical progress toward quantum computation with spins in quantum dots (QDs) is reviewed, with particular focus on QDs formed in GaAs heterostructures, on nanowire-based QDs, and on self-assembled QDs. We report on a remarkable evolution of the field where decoherence, one of the main challenges for realizing quantum computers, no longer seems to be the stumbling block it had originally been considered. General concepts, relevant quantities, and basic requirements for spin-based quantum computing are explained; opportunities and challenges of spin-orbit interaction and nuclear spins are reviewed. We discuss recent achievements, present current theoretical proposals, and make several suggestions for further experiments.

preprint2011arXiv

Strong Spin-Orbit Interaction and Helical Hole States in Ge/Si Nanowires

We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-energy valence band is quasidegenerate, formed by two doublets of different orbital angular momenta, and can be controlled via the relative shell thickness and via external fields. We find that direct (dipolar) coupling to a moderate electric field leads to an unusually large spin-orbit interaction of Rashba type on the order of meV which gives rise to pronounced helical states enabling electrical spin control. The system allows for quantum dots and spin qubits with energy levels that can vary from nearly zero to several meV, depending on the relative shell thickness.