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Researcher profile

Mark R. Hirsbrunner

Mark R. Hirsbrunner contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

3 published item(s)

preprint2025arXiv

Quantized crystalline-electromagnetic responses in insulators

We introduce new classes of gapped topological phases characterized by quantized crystalline-electromagnetic responses, termed "multipolar Chern insulators". These systems are characterized by nonsymmorphic momentum-space symmetries and mirror symmetries, leading to quantization of momentum-weighted Berry curvature multipole moments. We construct lattice models for such phases and confirm their quantized responses through numerical calculations. These systems exhibit bound charge and momentum densities at lattice and magnetic defects, and currents induced by electric or time-varying strain fields. Our work extends the classification of topological matter by uncovering novel symmetry-protected topological phases with quantized responses.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Engineering ideal helical topological networks in stanene via Zn decoration

The xene family of topological insulators plays a key role in many proposals for topological electronic, spintronic, and valleytronic devices. These proposals rely on applying local perturbations, including electric fields and proximity magnetism, to induce topological phase transitions in xenes. However, these techniques lack control over the geometry of interfaces between topological regions, a critical aspect of engineering topological devices. We propose adatom decoration as a method for engineering atomically precise topological edge modes in xenes. Our first-principles calculations show that decorating stanene with Zn adatoms exclusively on one of two sublattices induces a topological phase transition from the quantum spin Hall (QSH) to quantum valley Hall (QVH) phase and confirm the existence of spin-valley polarized edge modes propagating at QSH/QVH interfaces. We conclude by discussing technological applications of these edge modes that are enabled by the atomic precision afforded by recent advances in adatom manipulation technology.

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preprint2020arXiv

Electric field effects on the band gap and edge states of monolayer 1T'-WTe2

Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconventional, potentially topological superconducting state upon tuning the carrier concentration with gating. However, despite extensive studies, the effects of gating on the band structure and the helical edge states have not yet been established. In this work we present a combined low-temperature STM and first principles study of back-gated monolayer 1T'-WTe2 films grown on graphene. Consistent with a quantum spin Hall system, the films show well-defined bulk gaps and clear edge states that span the gap. By directly measuring the density of states with STM spectroscopy, we show that the bulk band gap magnitude shows substantial changes with applied gate voltage, which is contrary to the naïve expectation that a gate would rigidly shift the bands relative to the Fermi level. To explain our data, we carry out density functional theory and model Hamiltonian calculations which show that a gate electric field causes doping and inversion symmetry breaking which polarizes and spin-splits the bulk bands. Interestingly, the calculated spin splitting from the effective Rashba-like spin-orbit coupling can be in the tens of meV for the electric fields in the experiment, which may be useful for spintronics applications. Our work reveals the strong effect of electric fields on the bulk band structure of monolayer 1T'-WTe2, which will play a critical role in our understanding of gate-induced phenomena in this system.

0 citations0 reviewsNo code linkedOpen access