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Guannan Chen

Guannan Chen contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Structured Personality Control and Adaptation for LLM Agents

Large Language Models (LLMs) are increasingly shaping human-computer interaction (HCI), from personalized assistants to social simulations. Beyond language competence, researchers are exploring whether LLMs can exhibit human-like characteristics that influence engagement, decision-making, and perceived realism. Personality, in particular, is critical, yet existing approaches often struggle to achieve both nuanced and adaptable expression. We present a framework that models LLM personality via Jungian psychological types, integrating three mechanisms: a dominant-auxiliary coordination mechanism for coherent core expression, a reinforcement-compensation mechanism for temporary adaptation to context, and a reflection mechanism that drives long-term personality evolution. This design allows the agent to maintain nuanced traits while dynamically adjusting to interaction demands and gradually updating its underlying structure. Personality alignment is evaluated using Myers-Briggs Type Indicator questionnaires and tested under diverse challenge scenarios as a preliminary structured assessment. Findings suggest that evolving, personality-aware LLMs can support coherent, context-sensitive interactions, enabling naturalistic agent design in HCI.

preprint2022arXiv

NTIRE 2022 Challenge on High Dynamic Range Imaging: Methods and Results

This paper reviews the challenge on constrained high dynamic range (HDR) imaging that was part of the New Trends in Image Restoration and Enhancement (NTIRE) workshop, held in conjunction with CVPR 2022. This manuscript focuses on the competition set-up, datasets, the proposed methods and their results. The challenge aims at estimating an HDR image from multiple respective low dynamic range (LDR) observations, which might suffer from under- or over-exposed regions and different sources of noise. The challenge is composed of two tracks with an emphasis on fidelity and complexity constraints: In Track 1, participants are asked to optimize objective fidelity scores while imposing a low-complexity constraint (i.e. solutions can not exceed a given number of operations). In Track 2, participants are asked to minimize the complexity of their solutions while imposing a constraint on fidelity scores (i.e. solutions are required to obtain a higher fidelity score than the prescribed baseline). Both tracks use the same data and metrics: Fidelity is measured by means of PSNR with respect to a ground-truth HDR image (computed both directly and with a canonical tonemapping operation), while complexity metrics include the number of Multiply-Accumulate (MAC) operations and runtime (in seconds).

preprint2020arXiv

Electric field effects on the band gap and edge states of monolayer 1T'-WTe2

Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconventional, potentially topological superconducting state upon tuning the carrier concentration with gating. However, despite extensive studies, the effects of gating on the band structure and the helical edge states have not yet been established. In this work we present a combined low-temperature STM and first principles study of back-gated monolayer 1T'-WTe2 films grown on graphene. Consistent with a quantum spin Hall system, the films show well-defined bulk gaps and clear edge states that span the gap. By directly measuring the density of states with STM spectroscopy, we show that the bulk band gap magnitude shows substantial changes with applied gate voltage, which is contrary to the naïve expectation that a gate would rigidly shift the bands relative to the Fermi level. To explain our data, we carry out density functional theory and model Hamiltonian calculations which show that a gate electric field causes doping and inversion symmetry breaking which polarizes and spin-splits the bulk bands. Interestingly, the calculated spin splitting from the effective Rashba-like spin-orbit coupling can be in the tens of meV for the electric fields in the experiment, which may be useful for spintronics applications. Our work reveals the strong effect of electric fields on the bulk band structure of monolayer 1T'-WTe2, which will play a critical role in our understanding of gate-induced phenomena in this system.