Researcher profile

Mark Platt

Mark Platt contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Snowmass 2021: Superconducting Sensor Fabrication Capabilities for HEP Science

Superconducting sensors are a key enabling technology for many HEP experiments with advances in sensor capabilities leading directly to expanded science reach. The unique materials and processes required for the fabrication of these sensors makes commercial sourcing impractical in comparison with semiconducting devices. Subsequently, the development and fabrication of new sensors are often performed at academic cleanrooms supported through HEP basic detector research and/or project funds. While this operational model has been successful to date, we are at a turning point in the history of superconducting electronics, as evidenced by the rapid growth in the field of quantum computing, when scale and sophistication of these sensors can lead to significant progress. In order to achieve this progress and meet the needs of the next generations of HEP experiments, continued support of all stages of the superconducting sensors development pipeline is necessary.

preprint2020arXiv

Removal of $^{210}$Pb by Etch of Crystalline Detector Sidewalls

A potential source of dominant backgrounds for many rare-event searches or screening detectors is from radon daughters, specifically $^{210}$Pb, deposited on detector surfaces, often during detector fabrication. Performing a late-stage etch is challenging because it may damage the detector. This paper describes a late-stage etching technique that reduces surface $^{210}$Pb and $^{210}$Po by $>99\times$ at 90% C.L.

preprint2020arXiv

Single Electron-Hole Pair Sensitive Silicon Detector with Surface Event Rejection

We demonstrate single electron-hole pair resolution in a single-sided, contact-free 1 cm$^2$ by 1 mm thick Si crystal operated at 48 mK, with a baseline energy resolution of 3 eV. This crystal can be operated at voltages in excess of $\pm50$ V, resulting in a measured charge resolution of 0.06 electron-hole pairs. The high aluminum coverage ($\sim$70%) of this device allows for the discrimination of surface events and separation of events occurring near the center of the detector from those near the edge. We use this discrimination ability to show that non-quantized dark events seen in previous detectors of a similar design are likely dominated by charge leakage along the side wall of the device.