Researcher profile

Mark O. Goerbig

Mark O. Goerbig contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

From the Integer to the Fractional Quantum Hall Effect in Graphene

The fractional quantum Hall effect is a very particular manifestation of electronic correlations in two-dimensional systems in a strong perpendicular magnetic field. It arises as a consequence of a strong Coulomb repulsion between electrons in the same Landau level that conspires with a particular chirality of the electronic states. This chirality is inherited from the classical cyclotron motion, i.e. a particular sense of electronic rotation due to the orientation of the magnetic field. The specificity of the FQHE in graphene consists of a four-fold spin-valley degeneracy inherited from the electronic bands in the vicinity of the Fermi level. The relevant Coulomb interaction respects this SU(4) symmetry, and one is therefore confronted with a generic four-component fractional quantum Hall effect, as well as with other correlated four-component phases, such as spin-valley ferromagnetic states. The present article aims at a -- mainly theoretical -- discussion of these exotic phases, in comparison with experimental evidence for them.

preprint2020arXiv

Volkov-Pankratov states in topological superconductors

We study the in-gap states that appear at the boundaries of both 1D and 2D topological superconductors. While the massless Majorana quasiparticles are guaranteed to arise by the bulk-edge correspondence, we find that they could be accompanied by massive Volkov-Pankratov (VP) states which are present only when the interface is sufficiently smooth. These predictions can be tested in an s-wave superconductor with Rashba spin-orbit coupling placed on top of a magnetic domain wall. We calculate the spin-resolved local density of states of the VP states about the band inversion generated by a magnetic domain wall and find that they are oppositely spin-polarized on either side of the topological phase boundary. We also demonstrate that the spatial position, energy-level spacing, and spin polarization of the VP states can be modified by the introduction of in-plane electric fields.