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Researcher profile

Mark L. Brongersma

Mark L. Brongersma contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phcond-mat.supr-conphysics.comp-ph

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Published work

7 published item(s)

preprint2022arXiv

Quantum Analog of Vibration Isolation: From Room Temperature Superfluorescence to High Temperature Superconductivity

The development and the use of quantum technologies are hindered by a fundamental challenge: Quantum materials exhibit macroscopic quantum properties at extremely low temperatures due to the loss of quantum coherence at elevated temperatures. Here, based on our recent discovery of room temperature superfluorescence in perovskites, we present the Quantum Analog of Vibration Isolation, 'QAVI', model and explain how it protects the quantum phase against dephasing at high temperatures. We then postulate the requirements for observation of macroscopic quantum phenomena at practical temperatures and propose a unified model for all macroscopic quantum phase transitions. We further present the general features of the temperature and density phase diagram of macroscopic quantum phase transitions that are mediated by the QAVI process and identify the similarities observed in the phase diagram of high Tc superconductors. Understanding this fundamental quantum coherence protection mechanism is imperative to accelerate the discovery of high temperature macroscopic quantum phenomena, and offers significant potential for developing quantum technologies functioning under practical conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

High-Specific-Power Flexible Transition Metal Dichalcogenide Solar Cells

Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: 1) transparent graphene contacts to mitigate Fermi-level pinning, 2) $\rm{MoO}_\it{x}$ capping for doping, passivation and anti-reflection, and 3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of $\rm{4.4\ W\,g^{-1}}$ for flexible TMD ($\rm{WSe_2}$) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to $\rm{46\ W\,g^{-1}}$, creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Silicon Mie Resonators for Highly Directional Light Emission from monolayer MoS2

Controlling light emission from quantum emitters has important applications ranging from solid-state lighting and displays to nanoscale single-photon sources. Optical antennas have emerged as promising tools to achieve such control right at the location of the emitter, without the need for bulky, external optics. Semiconductor nanoantennas are particularly practical for this purpose because simple geometries, such as wires and spheres, support multiple, degenerate optical resonances. Here, we start by modifying Mie scattering theory developed for plane wave illumination to describe scattering of dipole emission. We then use this theory and experiments to demonstrate several pathways to achieve control over the directionality, polarization state, and spectral emission that rely on a coherent coupling of an emitting dipole to optical resonances of a Si nanowire. A forward-to-backward ratio of 20 was demonstrated for the electric dipole emission at 680 nm from a monolayer MoS2 by optically coupling it to a Si nanowire.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

A Nanomembrane-Based Bandgap-Tunable Germanium Microdisk Using Lithographically-Customizable Biaxial Strain for Silicon-Compatible Optoelectronics

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to conveniently induce a large, spatially homogenous strain in microdisks patterned within ultrathin germanium nanomembranes. Our technique works by concentrating and amplifying a pre-existing small strain into the microdisk region. Biaxial strains as large as 1.11% are observed by Raman spectroscopy and are further confirmed by photoluminescence measurements, which show enhanced and redshifted light emission from the strained microdisks. Our technique allows the amount of biaxial strain to be customized lithographically, allowing the bandgaps of different microdisks to be independently tuned in a single mask process. Our theoretical calculations show that this platform can deliver substantial performance improvements, including a >200x reduction in the lasing threshold, to biaxially strained germanium lasers for silicon-compatible optical interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrically Tunable Optical Absorption in a Graphene-based Salisbury Screen

We demonstrate a graphene-based Salisbury screen consisting of a single layer of graphene placed in close proximity to a gold back reflector. The light absorption in the screen can be actively tuned by electrically gating the carrier density in the graphene layer with an ionic liquid/gel. The screen was designed to achieve maximum absorption at a target wavelength of 3.2 micrometer by using a 600 nm-thick, non-absorbing silica spacer layer. Spectroscopic reflectance measurements were performed in-situ as a function of gate bias. The changes in the reflectance spectra were analyzed using a Fresnel based transfer matrix model in which graphene was treated as an infinitesimally thin sheet with conductivity given by the Kubo formula. Temporal coupled mode theory was employed to analyze and intuitively understand the observed absorption changes in the Salisbury screen. We achieved ~ 6 % change in the optical absorption of graphene by tuning the applied gate bias from 0.8 V to 2.6 V, where 0.8 V corresponds to graphene's charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Near field radiative thermal transfer between nano-structured periodic materials

This paper provides a method based on rigorous coupled wave analysis for the calculation of the radiative thermal capacitance between a layer that is patterned with arbitrary, periodically repeating features and a planar one. This method is applied to study binary gratings and arrays of beams with a rectangular cross section. The effects of the structure size and spacing on the thermal capacitance are investigated. In all of these calculations, a comparison is made with an effective medium theory which becomes increasingly accurate as the structure sizes fall well below the relevant resonance wavelength. Results show that new levels of control over the magnitude and spectral contributions to thermal capacitance can be achieved with corrugated structures relative to planar ones.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Tensile-Strained Germanium-on-Insulator Substrate Fabrication for Silicon-Compatible Optoelectronics

We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible optoelectronic device fabrication. Crystal quality is assessed using X-Ray Diffraction (XRD) and Transmission Electron Microscopy. A biaxial tensile film strain of 0.16% is verified by XRD. Suitability for device manufacturing is demonstrated through fabrication and characterization of metal-semiconductor-metal photodetectors that exhibit photoresponse beyond 1.55 μm. The substrate fabrication process is compatible with complementary metal-oxide-semiconductor manufacturing and represents a potential route to wafer-scale integration of silicon-compatible optoelectronics.

0 citations0 reviewsNo code linkedOpen access