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Mark A. Wistey

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cond-mat.mtrl-sci physics.comp-ph

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preprint2015arXiv

Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals

Dilute germanium carbides (Ge1-xCx) offer a direct bandgap for compact silicon photonics, but widely varying results have been reported. This work uses ab initio simulations with HSE06 hybrid functionals and spin-orbit coupling to study the Ge1-xCx band structure behavior in the absence of defects. Contrary to Vegard's law, the conduction band minimum at k=0 is consistently found to decrease with increasing C content, while L and X valleys change much more slowly. A vanishing bandgap was observed for all alloys with x>0.017. Conduction bands deviate from a constant-potential band anticrossing model except near the center of the Brillouin zone.

preprint2014arXiv

Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)

This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) of Ge annealed under similar conditions on GaAs and Al0.3Ga0.7As surfaces reveal the gradual suppression of QD formation with decreasing Al-content of the buffer. To investigate the prospects of using encapsulated Ge dots for upconverting photovoltaics, in which photocurrent can still be generated from photons with energy less than the host bandgap, Ge QDs are embedded into the active region of III-V PIN diodes by MBE. It is observed that orders of magnitude higher short-circuit current is obtained at photon energies below the GaAs bandgap compared with a reference PIN diode without Ge QDs. These results demonstrate the promise of Ge QDs for upconverting solar cells and the realization of device-quality integration of group IV and III-V semiconductors.

preprint2013arXiv

Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects

We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction (RHEED) pattern changed from 2x3 to 2x5 with anneal, which can be explained by surface reconstructions based on the electron-counting model.