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Researcher profile

Marios Zacharias

Marios Zacharias contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.comp-phphysics.data-an

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Published work

5 published item(s)

preprint2022arXiv

A machine learning route between band mapping and band structure

Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods. To cope with the growing size and scale of photoemission data, we develop a pipeline including probabilistic machine learning and the associated data processing, optimization and evaluation methods for band structure reconstruction, leveraging theoretical calculations. The pipeline reconstructs all 14 valence bands of a semiconductor and shows excellent performance on benchmarks and other materials datasets. The reconstruction uncovers previously inaccessible momentum-space structural information on both global and local scales, while realizing a path towards integration with materials science databases. Our approach illustrates the potential of combining machine learning and domain knowledge for scalable feature extraction in multidimensional data.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Direct view of phonon dynamics in atomically thin MoS$_{2}$

Transition metal dichalcogenide monolayers and heterostructures are highly tunable material systems that provide excellent models for physical phenomena at the two-dimensional (2D) limit. While most studies to date have focused on electrons and electron-hole pairs, phonons also play essential roles. Here, we apply ultrafast electron diffraction and diffuse scattering to directly quantify, with time and momentum resolution, electron-phonon coupling (EPC) in monolayer molybdenum disulfide (MoS$_{2}$) and phonon transport from the monolayer to a silicon nitride (Si$_3$N$_4$) substrate. Optically generated hot carriers result in a profoundly anisotropic distribution of phonons in the monolayer on the $\sim$ 5 ps time scale. A quantitative comparison with ab-initio ultrafast dynamics simulations reveals the essential role of dielectric screening in weakening EPC. Thermal transport from the monolayer to the substrate occurs with the phonon system far from equilibrium. While screening in 2D is known to strongly affect equilibrium properties, our findings extend this understanding to the dynamic regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fully Anharmonic, Non-Perturbative Theory of Vibronically Renormalized Electronic Band Structures

We develop a first-principles approach for the treatment of vibronic interactions in solids that overcomes the main limitations of state-of-the-art electron-phonon coupling formalisms. In particular, anharmonic effects in the nuclear dynamics are accounted to all orders via ab initio molecular dynamics simulations. This non-perturbative, self-consistent approach evaluates the response of the wave functions along the computed anharmonic trajectory; thus it fully considers the coupling between nuclear and electronic degrees of freedom. We validate and demonstrate the merits of the concept by calculating temperature-dependent, momentum-resolved spectral functions for silicon and the cubic perovskite SrTiO3, a strongly anharmonic material featuring soft modes. In the latter case, our approach reveals that anharmonicity and higher-order vibronic couplings contribute substantially to the electronic-structure at finite-temperatures, noticeably affecting band gaps and effective masses, and hence macroscopic properties such as transport coefficients.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Temperature dependence of the optical properties of silicon nanocrystals

Silicon nanocrystals (SiNCs) have been under active investigation in the last decades and have been considered as a promising candidate for many optoelectronic applications including highly-efficient solar cells. Some of the fundamental properties of interest in these nanostructures is the temperature dependence of their optical absorption onset, and how this is controlled by different passivation regimes. In the present work we employ first-principles calculations in conjunction with the special displacement method to study the temperature dependence of the band gap renormalization of free-standing hydrogen-terminated, and oxidized SiNCs, as well as matrix-embedded SiNCs in amorphous silica, and we obtain good agreement with experimental photoluminescence data. We also provide strong evidence that the electron-phonon interplay at the surface of the nanocrystal is suppressed by oxidation and the surrounding amorphous matrix. For the matrix-embedded SiNCs, we show a high correlation between the temperature dependence of the band gap and the Si-Si strained bonds. This result emphasizes the immanent relationship of electron-phonon coupling and thermal structural distortions. We also demonstrate that, apart from quantum confinement, Si- Si strained bonds are the major cause of zero-phonon quasidirect transitions in matrix-embedded SiNCs. As a final point, we clarify that, unlike optical absorption in bulk Si, phonon-assisted electronic transitions play a secondary role in SiNCs.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Theory of the special displacement method for electronic structure calculations at finite temperature

Calculations of electronic and optical properties of solids at finite temperature including electron-phonon interactions and quantum zero-point renormalization have enjoyed considerable progress during the past few years. Among the emerging methodologies in this area, we recently proposed a new approach to compute optical spectra at finite temperature including phonon-assisted quantum processes via a single supercell calculation [Zacharias and Giustino, Phys. Rev. B 94, 075125 (2016)]. In the present work we considerably expand the scope of our previous theory starting from a compact reciprocal space formulation, and we demonstrate that this improved approach provides accurate temperature-dependent band structures in three-dimensional and two-dimensional materials, using a special set of atomic displacements in a single supercell calculation. We also demonstrate that our special displacement reproduces the thermal ellipsoids obtained from X-ray crystallography, and yields accurate thermal averages of the mean-square atomic displacements. At a more fundamental level, we show that the special displacement represents an exact single-point approximant of an imaginary-time Feynman's path integral for the lattice dynamics. This enhanced version of the special displacement method enables non-perturbative, robust, and straightforward ab initio calculations of the electronic and optical properties of solids at finite temperature, and can easily be used as a post-processing step to any electronic structure code. Given its simplicity and numerical stability, the present development is suited for high-throughput calculations of band structures, quasiparticle corrections, optical spectra, and transport coefficients at finite temperature.

0 citations0 reviewsNo code linkedOpen access