Researcher profile

Marianne Moore

Marianne Moore contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Accelerating Earth-Bound Dark Matter

A fraction of the dark matter may consist of a particle species that interacts much more strongly with the Standard Model than a typical weakly interacting massive particle (WIMP) of similar mass. Such a strongly interacting dark matter component could have avoided detection in searches for WIMP-like dark matter through its interactions with the material in the atmosphere and the Earth that slow it down significantly before reaching detectors underground. These same interactions can also enhance the density of a strongly interacting dark matter species near the Earth's surface to well above the local galactic dark matter density. In this work we propose two new methods of detecting strongly interacting dark matter based on accelerating the enhanced population expected in the Earth through scattering. The first approach is to use underground nuclear accelerator beams to upscatter the ambient dark matter population into a WIMP-style detector located downstream. In the second technique, dark matter is upscattered with an intense thermal source and detected with a low-threshold dark matter detector. We also discuss potential candidates for strongly interacting dark matter and we show that the scenario can be naturally realized with a hidden fermion coupled to a sub-GeV dark photon.

preprint2020arXiv

Shear viscosity as a probe of nodal topology

Electronic materials can sustain a variety of unusual, but symmetry protected touchings of valence and conduction bands, each of which is identified by a distinct topological invariant. Well-known examples include linearly dispersing pseudo-relativistic fermions in monolayer graphene, Weyl and nodal-loop semimetals, biquadratic (bicubic) band touching in bilayer (trilayer) graphene, as well as mixed dispersions in multi-Weyl systems. Here we show that depending on the underlying band curvature, the shear viscosity in the collisionless regime displays a unique power-law scaling with frequency at low temperatures, bearing the signatures of the band topology, which are distinct from the ones when the system resides at the brink of a topological phase transition into a band insulator. Therefore, besides the density of states (governing specific heat, compressibility) and dynamic conductivity, shear viscosity can be instrumental to pin nodal topology in electronic materials.