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Maria Peressi

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cond-mat.mtrl-sci cond-mat.stat-mech cond-mat.str-el physics.data-an q-fin.RM

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preprint2023arXiv

Ultrafast all-optical manipulation of the charge-density-wave in VTe$_{2}$

The charge-density wave (CDW) phase in the layered transition-metal dichalcogenide VTe$_{2}$ is strongly coupled to the band inversion involving vanadium and tellurium orbitals. In particular, this coupling leads to a selective disappearance of the Dirac-type states that characterize the normal phase, when the CDW phase sets in. Here, by means of broadband time-resolved optical spectroscopy (TR-OS), we investigate the ultrafast reflectivity changes caused by collective and single particle excitations in the CDW ground state of VTe$_{2}$. Remarkably, our measurements show the presence of two collective (amplitude) modes of the CDW ground state. By applying a double-pulse excitation scheme, we show the possibility to manipulate these modes, demonstrating a more efficient way to control and perturb the CDW phase in VTe$_{2}$.

preprint2020arXiv

Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel

An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different routes can be followed, depending on the height of the steps to be crossed. When a growing graphene flake reaches a monoatomic step, it extends jointly with the underlying Ni layer; for higher Ni edges, a different process, involving step retraction and graphene landing, becomes active. At step bunches, the latter mechanism leads to a peculiar 'staircase formation' behavior, where terraces of equal width form under the overgrowing graphene, driven by a balance in the energy cost between C-Ni bond formation and stress accumulation in the carbon layer. Our results represent a step towards bridging the material gap in searching new strategies and methods for the optimization of chemical vapor deposition graphene production on polycrystalline metal surfaces.

preprint2014arXiv

On the concentration of large deviations for fat tailed distributions, with application to financial data

Large deviations for fat tailed distributions, i.e. those that decay slower than exponential, are not only relatively likely, but they also occur in a rather peculiar way where a finite fraction of the whole sample deviation is concentrated on a single variable. The regime of large deviations is separated from the regime of typical fluctuations by a phase transition where the symmetry between the points in the sample is spontaneously broken. For stochastic processes with a fat tailed microscopic noise, this implies that while typical realizations are well described by a diffusion process with continuous sample paths, large deviation paths are typically discontinuous. For eigenvalues of random matrices with fat tailed distributed elements, a large deviation where the trace of the matrix is anomalously large concentrates on just a single eigenvalue, whereas in the thin tailed world the large deviation affects the whole distribution. These results find a natural application to finance. Since the price dynamics of financial stocks is characterized by fat tailed increments, large fluctuations of stock prices are expected to be realized by discrete jumps. Interestingly, we find that large excursions of prices are more likely realized by continuous drifts rather than by discontinuous jumps. Indeed, auto-correlations suppress the concentration of large deviations. Financial covariance matrices also exhibit an anomalously large eigenvalue, the market mode, as compared to the prediction of random matrix theory. We show that this is explained by a large deviation with excess covariance rather than by one with excess volatility.

preprint2001arXiv

Role of defects in the electronic properties of amorphous/crystalline Si interface

The mechanism determining the band alignment of the amorphous/crystalline Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes ranging from classical model-potential molecular dynamics to ab-initio methods. We found that in coordination defect-free samples the band alignment is almost vanishing and independent on interface details. In defect-rich samples, instead, the band alignment is sizeably different with respect to the defect-free case, but, remarkably, almost independent on the concentration of defects. We rationalize these findings within the theory of semiconductor interfaces.