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Maria L. K. Viitaniemi

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cond-mat.mtrl-sci quant-ph cond-mat.mes-hall

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preprint2022arXiv

Ensemble spin relaxation of shallow donor qubits in ZnO

We present an experimental and theoretical study of the longitudinal electron spin relaxation ( $T_1$ ) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$ , with $4\leq n\leq 5$ , over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.

preprint2021arXiv

Coherent Spin Preparation of Indium Donor Qubits in Single ZnO Nanowires

Shallow donors in ZnO are promising candidates for photon-mediated quantum technologies. Utilizing the indium donor, we show that favorable donor-bound exciton optical and electron spin properties are retained in isolated ZnO nanowires. The inhomogeneous optical linewidth of single nanowires (60 GHz) is within a factor of 2 of bulk single-crystalline ZnO. Spin initialization via optical pumping is demonstrated and coherent population trapping is observed. The two-photon absorption width approaches the theoretical limit expected due to the hyperfine interaction between the indium nuclear spin and the donor-bound electron.

preprint2019arXiv

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

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