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Maria Hilse

Maria Hilse contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci physics.app-ph

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preprint2020arXiv

Changes of Magnetism in a Magnetic Insulator due to Proximity to a Topological Insulator

This letter reports the modification of magnetism in a magnetic insulator Y3Fe5O12 thin film by topological surface states (TSS) in an adjacent topological insulator Bi2Se3 thin film. Ferromagnetic resonance measurements show that the TSS in Bi2Se3 produces a perpendicular magnetic anisotropy, results in a decrease in the gyromagnetic ratio, and enhances the damping in Y3Fe5O12. Such TSS-induced changes become more pronounced as the temperature decreases from 300 K to 50 K. These results suggest a completely new approach for control of magnetism in magnetic thin films.

preprint2016arXiv

Diffraction at GaAs/Fe$_{3}$Si core/shell nanowires: the formation of nanofacets

GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes. Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe$_3$Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1$\overline{1}$0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe$_{3}$Si shells and GaAs cores occurring at increased growth temperatures.

preprint2015arXiv

Facetted growth of Fe3Si shells around GaAs nanowires on Si(111)

GaAs nanowires and GaAs/Fe3Si core/shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy. The surfaces of the original GaAs NWs are completely covered by magnetic Fe3Si exhibiting nanofacets and an enhanced surface roughness compared to the bare GaAs NWs. Shell growth at a substrate temperature of T{S} = 200 °C leads to regular nanofacetted Fe3Si shells. These facets, which lead to thickness inhomogeneities of the shells, consist mainly of well pronounced Fe3Si(111) planes. The crystallographic orientation of core and shell coincide, i.e. they are pseudomorphic. The nanofacetted Fe3Si shells found in the present work are probably the result of the Vollmer-Weber island growth mode of Fe3Si on the {110} side facets of the GaAs NWs.

preprint2014arXiv

Real structure of lattice matched GaAs-Fe3Si core-shell nanowires

GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide surface, and the semiconducting GaAs nanowires grew epitaxially via the vapor-liquid-solid mechanism as single-crystals from holes in the oxide film. We observed two stages of growth of the GaAs nanowires, first the regular growth and second the residual growth after the Ga supply was finished. The magnetic Fe3Si shells were deposited in an As-free chamber. They completely cover the GaAs cores although they consist of small grains. High-resolution TEM micrographs depict the differently oriented grains in the Fe3Si shells. Selected area diffraction of electrons and XRD gave further evidence that the shells are textured and not single crystals. Facetting of the shells was observed, which lead to thickness inhomogeneities of the shells.