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Maria Barbara Maccioni

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3 publications

preprint2015arXiv

Phase diagram and polarization of stable phases of (Ga1−x_{1-x}Inx_x)2_2O3_3

Using density-functional ab initio calculations, we provide a revised phase diagram of (Ga1−x_{1-x}Inx)2_{x})_2O3_3. Three phases --monoclinic, hexagonal, cubic bixbyite-- compete for the ground state. In particular, in the xx∼\sim0.5 region we expect coexistence of hexagonal, ββ, and bixbyite (the latter separating into binary components). Over the whole xx range, mixing occurs in three disconnected regions, and non-mixing in two additional distinct regions. We then explore the permanent polarization of the various phases, finding that none of them is polar at any concentration, despite the possible symmetry reductions induced by alloying. On the other hand, we find that the ε\varepsilon phase of Ga2_2O3_3 stabilized in recent growth experiments is pyroelectric --i.e. locked in a non-switchable polarized structure-- with ferroelectric-grade polarization and respectable piezoelectric coupling. We suggest that this phase could be used profitably to produce high-density electron gases in transistor structures.

preprint2015arXiv

Properties of (Ga1−x_{1-x}Inx_x)2_2O3_3 over the whole xx range

Using density-functional ab initio theoretical techniques, we study (Ga1−x_{1-x}Inx_x)2_2O3_3 in both its equilibrium structures (monoclinic ββ and bixbyite) and over the whole range of composition. We establish that the alloy exhibits a large and temperature-independent miscibility gap. On the low-xx side, the favored phase is isostructural with ββ-Ga2_2O3_3; on the high-xx side, it is isostructural with bixbyite In2_2O3_3. The miscibility gap opens between approximately 15\% and 55\% In content for the bixbyite alloy grown epitaxially on In2_2O3_3, and 15\% and 85\% In content for the free-standing bixbyite alloy. The gap, volume and band offsets to the parent compound also exhibit anomalies as function of xx. Specifically, the offsets in epitaxial conditions are predominantly type-B staggered, but have opposite signs in the two end-of-range phases.

preprint2014arXiv

Low In solubility and band offsets in the small-xx ββ-Ga2_2O3_3/(Ga1−x_{1-x}Inx_x)2_2O3_3 system

Based on first-principles calculations, we show that the maximum reachable concentration xx in the (Ga1−x_{1-x}Inx_x)2_2O3_3 alloy in the low-xx regime (i.e. In solubility in ββ-Ga2_2O3_3) is around 10%. We then calculate the band alignment at the (100) interface between ββ-Ga2_2O3_3 and (Ga1−x_{1-x}Inx_x)2_2O3_3 at 12%, the nearest computationally treatable concentration. The alignment is strongly strain-dependent: it is of type-B staggered when the alloy is epitaxial on Ga2_2O3_3, and type-A straddling in a free-standing superlattice. Our results suggest a limited range of applicability of low-In-content GaInO alloys.

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