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Researcher profile

Marco M. Furchi

Marco M. Furchi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.optics

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Published work

4 published item(s)

preprint2014arXiv

Mechanisms of photoconductivity in atomically thin MoS2

Atomically thin transition metal dichalcogenides have emerged as promising candidates for sensitive photodetection. Here, we report a photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors. We identify photovoltaic and photoconductive effects, which both show strong photogain. The photovoltaic effect is described as a shift in transistor threshold voltage due to charge transfer from the channel to nearby molecules, including SiO2 surface-bound water. The photoconductive effect is attributed to the trapping of carriers in band tail states in the molybdenum disulfide itself. A simple model is presented that reproduces our experimental observations, such as the dependence on incident optical power and gate voltage. Our findings offer design and engineering strategies for atomically thin molybdenum disulfide photodetectors, and we anticipate that the results are generalizable to other transition metal dichalcogenides as well.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photovoltaic effect in an electrically tunable van der Waals heterojunction

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two- dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type- II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable and under appropriate gate bias, an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Solar-energy conversion and light emission in an atomic monolayer p-n diode

Two-dimensional (2D) atomic crystals, such as graphene and atomically thin transition metal dichalcogenides (TMDCs), are currently receiving a lot of attention. They are crystalline, and thus of high material quality, even so, they can be produced in large areas and are bendable, thus providing opportunities for novel applications. Here, we report a truly 2D p-n junction diode, based on an electrostatically doped tungsten diselenide (WSe2) monolayer. As p-n diodes are the basic building block in a wide variety of optoelectronic devices, our demonstration constitutes an important advance towards 2D optoelectronics. We present applications as (i) photovoltaic solar cell, (ii) photodiode, and (iii) light emitting diode. Light power conversion and electroluminescence efficiencies are ca. 0.5 % and 0.1 %, respectively. Given the recent advances in large-scale production of 2D crystals, we expect them to profoundly impact future developments in solar, lighting, and display technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

CMOS-compatible graphene photodetector covering all optical communication bands

Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received considerable interest due to the ability of cost-effective integration of electronics and optics on a single chip. While silicon enables the realization of optical waveguides and passive components, the integration of another, optically absorbing, material is required for photodetection. Germanium or compound semiconductors are traditionally used for this purpose; their integration with silicon technology, however, faces major challenges. Recently, graphene has emerged as a viable alternative for optoelectronic applications, including photodetection. Here, we demonstrate an ultra-wideband CMOS-compatible photodetector based on graphene. We achieve multi-gigahertz operation over all fiber-optic telecommunication bands, beyond the wavelength range of strained germanium photodetectors, whose responsivity is limited by their bandgap. Our work complements the recent demonstration of a CMOS-integrated graphene electro-optical modulator, paving the way for carbon-based optical interconnects.

0 citations0 reviewsNo code linkedOpen access