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Marcin Motyka

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2 published item(s)

preprint2026arXiv

Experimental Demonstration of Plasmon-Enabled Monolithic Bragg Reflectors for Infrared Light via Inverse Design

High-reflectivity mirrors in the mid-infrared (MIR) range are essential for next-generation optoelectronic devices but are still constrained by strain accumulation, poor thermal conductivity, and growth instability of thick multi-alloy stacks in conventional distributed Bragg reflectors (DBRs). We introduce plasmon-enabled DBRs (PE DBRs) based on modulation-doped monolithic InP, where plasmonic dispersion in highly doped layers provides a strong refractive-index contrast. Using inverse-design optimization targeting reduced free-carrier absorption and maximized reflectivity, we demonstrate that PE DBRs can achieve reflectivities approaching 100%. Experimentally grown 14 μm thick InP PE DBRs exhibit up to 99% reflectance with bandwidths reaching 18% of the design wavelength. The monolithic, junction-free configuration ensures low resistivity and enhanced thermal performance, offering a scalable platform for efficient plasmonic mirrors in MIR photonics, with potential applications in photodetectors, light-emitting diodes and lasers.

preprint2020arXiv

Electron-phonon coupling and a resonant-like optical observation of a band inversion in topological crystalline insulator Pb$_{1-x}$Sn$_x$Se

The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb$_{0.75}$Sn$_{0.25}$Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-phonon coupling resulting in resonant changes of LO phonon frequency for energy gap equal to zero or to LO phonon energy. This effect is absent for Pb$_{0.865}$Sn$_{0.135}$Se that exhibits an open energy gap with trivial band ordering at all temperatures. These results show that reflectivity in the THz range constitute a versatile experimental method for precise determination of band inversion in narrow-gap topological materials. For Pb$_{0.75}$Sn$_{0.25}$Se the transition from trivial insulator to topological crystalline insulator phase takes place at temperature T$_0$ = (172 $\pm$ 2) K.