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Marcin Kurpas

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cond-mat.mes-hall

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5 publications

preprint2020arXiv

Intrinsic and extrinsic spin-orbit coupling and spin relaxation in monolayer PtSe2_2

Monolayer PtSe2_2 is a semiconducting transition metal dichalcogenide characterized by an indirect band gap, space inversion symmetry, and high carrier mobility. Strong intrinsic spin-orbit coupling and the possibility to induce extrinsic spin-orbit fields by gating make PtSe2_2 attractive for fundamental spin transport studies as well as for potential spintronics applications. We perform a systematic theoretical study of the spin-orbit coupling and spin relaxation in this material. Specifically, we employ first principles methods to obtain the basic orbital and spin-orbital properties of PtSe2_2, also in the presence of an external transverse electric field. We calculate the spin mixing parameters b2b^2 and the spin-orbit fields ΩΩ for the Bloch states of electrons and holes. This information allows us to predict the spin lifetimes due to the Elliott-Yafet and D'yakonov-Perel mechanisms. We find that b2b^2 is rather large, on the order of 10−210^{-2} and 10−110^{-1}, while ΩΩ varies strongly with doping, being about 103−10410^{3} - 10^{4}\,ns−1^{-1} for %typical Fermi levels in the interval (10−100)(10-100) meV, carrier density in the interval 1013−101410^{13}-10^{14}\,cm−2^{-2} at the electric field of 1 V/nm. We estimate the spin lifetimes to be on the picosecond level.

Open access
preprint2019arXiv

The Electronic Thickness of Graphene

The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.

Open access
preprint2015arXiv

Charge transport through a semiconductor quantum dot-ring nanostructure

Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single electron transistor or a current rectifier. In both cases the transport characteristics strongly depends on the details of the confinement potential. The calculations are carried out for low and high bias regime, the latter being especially interesting in the context of current rectification due to fast relaxation processes.

Open access
preprint2012arXiv

Wave function engineering in quantum dot-ring nanostructures

Modern nanotechnology allows producing, depending on application, various quantum nanostructures with the desired properties. These properties are strongly influenced by the confinement potential which can be modified, e.g., by electrical gating. In this paper we analyze a nanostructure composed of a quantum dot surrounded by a quantum ring. We show that depending on the details of the confining potential the electron wave functions can be located in different parts of the structure. Since the properties of such a nanostructure strongly depend on the distribution of the wave functions, varying the applied gate voltage one can easily control them. In particular, we illustrate the high controllability of the nanostructure by demonstrating how its coherent, optical, and conducting properties can be drastically changed by a small modification of the confining potential.

Open access
preprint2010arXiv

Semiconductor quantum ring as a solid-state spin qubit

The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be initialized, addressed, manipulated, read out and coherently coupled to other quantum rings. An extensive discussion of relaxation and decoherence is presented. By analogy with quantum dots, the spin relaxation times due to spin-orbit interaction for experimentally accessible quantum ring architectures are calculated. The conditions are formulated under which qubits build on quantum rings can have long relaxation times of the order of seconds. Rapidly improving nanofabrication technology have made such ring devices experimentally feasible and thus promising for quantum state engineering.

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