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Marc Savanier

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Published work

3 published item(s)

preprint2016arXiv

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

Generation of photon pairs from compact, manufacturable and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity (JSI), which describes the frequency correlations of the photon pair. In particular, heralded single-photon generation requires uncorrelated photons, rather than the highly anti-correlated photons conventionally obtained under continuous-wave (CW) pumping. Recent attempts to achieve such a factorizable JSI have used short optical pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared to the Si microchip pair generator, dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from a Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a CW optical diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

preprint2016arXiv

Photon pair generation from compact silicon microring resonators using microwatt-level pump powers

Microring resonators made from silicon are becoming a popular microscale device format for generating photon pairs at telecommunications wavelengths at room temperature. In compact devices with a footprint less than $5\times 10^{-4}$ mm$^2$, we demonstrate pair generation using only a few microwatts of average pump power. We discuss the role played by important parameters such as the loss, group-velocity dispersion and the ring-waveguide coupling coefficient in finding the optimum operating point for silicon microring pair generation. Silicon photonics can be fabricated using deep ultraviolet lithography wafer-scale fabrication processes, which is scalable and cost-effective. Such small devices and low pump power requirements, and the side-coupled waveguide geometry which uses an integrated waveguide, could be beneficial for future scaled-up architectures where many pair-generation devices are required on the same chip.

preprint2015arXiv

Hybrid Lithium Niobate and Silicon Photonic Waveguides

We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.