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Maosheng Miao

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Published work

7 published item(s)

preprint2022arXiv

Unified chemical theory of structure and bonding in elemental metals

Most elemental metals under ambient conditions adopt simple structures such as BCC, FCC and HCP in specific groupings across the Periodic Table, and on compression, many of these elements undergo transitions to surprisingly complex structures, including open and low-symmetry phases not expected from conventional free-electron based theories of metals. First-principles calculations have been able to reproduce many observed structures and transitions, but a unified, predictive theory of bonding that underlies this behavior is not yet in hand. We propose a remarkably simple theory based on large-scale high-throughput calculations of the elements over a broad range of thermodynamic conditions. The results broaden the conventional concept of metallic bonding with a new perspective that both explains the stability of different simple structures as well as lower symmetry phases arising from electron localization at interstitial sites in these structures. The success of this simple framework reveals the important role of chemical interactions in governing the structures and electronic properties of simple metals.

preprint2015arXiv

ATLAS: A Real-Space Finite-Difference Implementation of Orbital-Free Density Functional Theory

Orbital-free density functional theory (OF-DFT) is a promising method for large-scale quantum mechanics simulation as it provides a good balance of accuracy and computational cost. Its applicability to large-scale simulations has been aided by progress in constructing kinetic energy functionals and local pseudopotentials. However, the widespread adoption of OF-DFT requires further improvement in its efficiency and robustly implemented software. Here we develop a real-space finite-difference method for the numerical solution of OF-DFT in periodic systems. Instead of the traditional self-consistent method, a powerful scheme for energy minimization is introduced to solve the Euler--Lagrange equation. Our approach engages both the real-space finite-difference method and a direct energy-minimization scheme for the OF-DFT calculations. The method is coded into the ATLAS software package and benchmarked using periodic systems of solid Mg, Al, and Al$_{3}$Mg. The test results show that our implementation can achieve high accuracy, efficiency, and numerical stability for large-scale simulations.

preprint2015arXiv

Constructing optimal local pseudopotentials from first principles

Local pseudopotential (LPP) is an important component of the orbital free density functional theory (OF-DFT), which is a promising large scale simulation method that can still maintain information of electron state in materials. Up to date, LPP is usually extracted from the solid state DFT calculations. It is unclear how to assess its transferability while applying to a much different chemical environment. Here we reveal a fundamental relation between the first principles norm-conserving PP (NCPP) and the LPP. Using the optimized effective potential method developed for exchange functional, we demonstrate that the LPP can be constructed optimally from the NCPP for a large number of elements. Our theory also reveals that the existence of an LPP is intrinsic to the elements, irrespective to the parameters used for the construction. Our method provides a unified method in constructing and assessing LPP in the framework of first principles pseudopotentials.

preprint2014arXiv

Half metallic and insulating phases in BN/Graphene lateral heterostructures

We investigate theoretically the electronic structure of graphene and boron nitride (BN) lateral heterostructures, which were fabricated in recent experiments. The first-principles density functional calculation demonstrates that a huge intrinsic transverse electric field can be induced in the graphene nanoribbon region, and depends sensitively on the edge configuration of the lateral heterostructure. The polarized electric field originates from the charge mismatch at the BN-graphene interfaces. This huge electric field can open a significant bang gap in graphene nanoribbon, and lead to fully spinpolarized edge states and induce half-metallic phase in the lateral BN/Graphene/BN heterostructure with proper edge configurations.

preprint2013arXiv

First-principles study of band alignments in the p-type hosts BaM2X2 (M = Cu, Ag; X = S, Se)

The electronic structures of four semiconductor compounds BaCu2S2, BaCu2Se2, BaAg2S2, and BaAg2Se2 are studied by density functional theory using both semi-local and hybrid functionals. The ionization energies and electron affinities were determined by aligning the electronic states with the vacuum level by calculating the electrostatic profile within a supercell slab model. The ionization energy and electron affinity of the compounds were calculated using the Heyd-Scuseria-Ernzerhof (HSE) functionals and range from 4.5 to 5.4 eV and 3.1 to 3.4 eV, respectively. The replacement of Cu by Ag slightly increases the ionization energy and electron affinity, while the replacement of S by Se decreases the ionization energy but slightly increases the electron affinity. Overall, the low ionization energies and small electron affinities suggest that these compounds possess good p-type doping propensities. The band gaps are somewhat small to be ideal candidates for transparent semiconducting behavior. The replacement of Cu with Ag in the barium sulfide compounds can increase the band gap from 1.62 eV to 2.01 eV.

preprint2013arXiv

Interface-induced Topological Insulator Transition in GaAs/Ge/GaAs Quantum Wells

We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which lead to a topological insulator transition. Our work provides a new method on realizing TI in commonly-used semiconductors and suggests a promising approach to integrate it in well developed semiconductor electronic devices.

preprint2012arXiv

Diamondoid Structure of Polymeric Nitrogen at High Pressures

High-pressure polymeric structures of nitrogen have attracted great attention owing to their potential application as high-energy-density materials. We report the density functional structural prediction of the unexpected stabilization of a diamondoid (or N10-cage) structure of polymeric nitrogen at high pressures. The structure adopts a highly symmetric body-centered cubic form with lattice sites occupied by N10 tetracyclic cages, each of which consists of 10 atoms and is covalently bonded with its six next-nearest N10 cages. The prediction of this diamondoid structure rules out the earlier proposed helical tunnel phase and demonstrates the high-order nature of polymeric nitrogen at extreme high pressures. Diamondoid nitrogen is a wide-gap insulator and energetically more favorable than the experimental cubic gauche and previously predicted layered Pba2 phases above 263 GPa, a pressure which is accessible to high pressure experiment.