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Researcher profile

Mao Wang

Mao Wang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciHardware Architecturequant-ph

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Published work

3 published item(s)

preprint2021arXiv

Organic charged polaritons in the ultrastrong coupling regime

We embedded an all-hydrocarbon-based carbocation in a metallic microcavity that was tuned to resonance with an electronic transition of the carbocation. The measured Rabi splitting was 41% of the excitation energy, putting the system well into the ultrastrong coupling regime. Importantly, due to the intrinsic charge on the carbocation, the polaritons that form carry a significant charge fraction $0.55 e_0$ and a large charge-to-mass ratio ($\sim 2400 e_0 / m_0$). Moreover, the ground state of the ultrastrongly coupled system is calculated to carry about one percent of one elementary charge, implying a potentially enhanced charge transport across the molecules. These unique properties of our system, together with its convenient preparation, provide a practical platform to study charged polaritons in the ultrastrong coupling regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Arnold: an eFPGA-Augmented RISC-V SoC for Flexible and Low-Power IoT End-Nodes

A wide range of Internet of Things (IoT) applications require powerful, energy-efficient and flexible end-nodes to acquire data from multiple sources, process and distill the sensed data through near-sensor data analytics algorithms, and transmit it wirelessly. This work presents Arnold: a 0.5 V to 0.8 V, 46.83 uW/MHz, 600 MOPS fully programmable RISC-V Microcontroller unit (MCU) fabricated in 22 nm Globalfoundries GF22FDX (GF22FDX) technology, coupled with a stateof-the-art (SoA) microcontroller to an embedded Field Programmable Gate Array (FPGA). We demonstrate the flexibility of the System-OnChip (SoC) to tackle the challenges of many emerging IoT applications, such as (i) interfacing sensors and accelerators with non-standard interfaces, (ii) performing on-the-fly pre-processing tasks on data streamed from peripherals, and (iii) accelerating near-sensor analytics, encryption, and machine learning tasks. A unique feature of the proposed SoC is the exploitation of body-biasing to reduce leakage power of the embedded FPGA (eFPGA) fabric by up to 18x at 0.5 V, achieving SoA state bitstream-retentive sleep power for the eFPGA fabric, as low as 20.5 uW. The proposed SoC provides 3.4x better performance and 2.9x better energy efficiency than other fabricated heterogeneous re-configurable SoCs of the same class.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.

0 citations0 reviewsNo code linkedOpen access