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Manuel Tanzer

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Published work

2 published item(s)

preprint2020arXiv

Thermal transport and frequency response of localized modes on low-stress nanomechanical silicon nitride drums featuring a phononic bandgap structure

Development of broadband thermal sensors for the detection of, among others, radiation, single nanoparticles, or single molecules is of great interest. In recent years, photothermal spectroscopy based on the shift of the resonance frequency of stressed nanomechanical resonators has been successfully demonstrated. Here, we show the application of soft-clamped phononic crystal membranes made of silicon nitride as thermal sensors. It is experimentally demonstrated how a quasi-bandgap remains even at very low tensile stress, in agreement with finite element method simulations. An increase of the relative responsivity of the fundamental defect mode is found when compared to that of uniform square membranes of equal size, with enhancement factors as large as an order of magnitude. We then show phononic crystals engineered inside nanomechanical trampolines, which results in additional reduction of the tensile stress and increased thermal isolation, resulting in further enhancement of the responsivity. Finally, defect mode and bandgap tuning is shown by laser heating of the defect to the point where the fundamental defect mode completely leaves the bandgap.

preprint2019arXiv

Influence of clamp-widening on the quality factor of nanomechanical silicon nitride resonators

Nanomechanical resonators based on strained silicon nitride (Si$_3$N$_4$) have received a large amount of attention in fields such as sensing and quantum optomechanics due to their exceptionally high quality factors ($Q$s). Room-temperature $Q$s approaching 1 billion are now in reach by means of phononic crystals (soft-clamping) and strain engineering. Despite great progress in enhancing $Q$s, difficulties in fabrication of soft-clamped samples limits their implementation into actual devices. An alternative means of achieving ultra-high $Q$s was shown using trampoline resonators with engineered clamps, which serves to localize the stress to the center of the resonator, while minimizing stress at the clamping. The effectiveness of this approach has since come into question from recent studies employing string resonators with clamp-tapering. Here, we investigate this idea using nanomechanical string resonators with engineered clampings similar to those presented for trampolines. Importantly, the effect of orienting the strings diagonally or perpendicularly with respect to the silicon frame is investigated. It is found that increasing the clamp width for diagonal strings slightly increases the $Q$s of the fundamental out-of-plane mode at small radii, while perpendicular strings only deteriorate with increasing clamp width. Measured $Q$s agree well with finite element method simulations even for higher-order resonances. The small increase cannot account for previously reported $Q$s of trampoline resonators. Instead, we propose the effect to be intrinsic and related to surface and radiation losses.