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Manuel Müller

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4 publications

preprint2021arXiv

Aluminum nitride integration on silicon nitride photonic circuits: a new hybrid approach towards on-chip nonlinear optics

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics due to its large χ(2)χ^{(2)} nonlinearity. Here we demonstrate the hybrid integration of AlN on silicon nitride (SiN) photonic chips. Composite microrings are fabricated by reactive DC sputtering of c-axis oriented AlN on top of pre-patterned SiN. This new approach does not require any patterning of AlN and depends only on reliable SiN nanofabrication. This simplifies the nanofabrication process drastically. Optical characteristics, such as the quality factor, propagation losses and group index, are obtained. Our hybrid resonators can have a one order of magnitude increase in quality factor after the AlN integration, with propagation losses down to \SI{0.7}{dB/cm}. Using finite-element simulations, phase matching in these waveguides is explored.

preprint2021arXiv

Magnetic field robust high quality factor NbTiN superconducting microwave resonators

We systematically study the performance of compact lumped element planar microwave Nb70Ti30N\mathrm{Nb_{70}Ti_{30}N} (NbTiN) resonators operating at 5 GHz in external in-plane magnetic fields up to 440 mT, a broad temperature regime from 2.2 K up to 13 K, as well as mK temperatures. For comparison, the resonators have been fabricated on thermally oxidized and pristine, (001) oriented silicon substrates. When operating the resonators in the multi-photon regime at T=2.2T=2.2 K, we find internal quality factors Qint≃Q_{\mathrm{int}}\simeq 2⋅1052\cdot10^5 for NbTiN resonators grown on pristine Si substrates, while resonators grown on thermally oxidized substrates show a reduced value of Qint≃Q_{\mathrm{int}}\simeq 1⋅1041\cdot10^4, providing evidence for additional loss channels for the latter substrate. In addition, we investigate the QQ-factors of the resonators on pristine Si substrates at millikelvin temperatures to asses their applicability for quantum applications. We find Qint≃Q_{\mathrm{int}}\simeq 2⋅1052\cdot10^5 in the single photon regime and Qint≃Q_{\mathrm{int}}\simeq 5⋅1055\cdot10^5 in the high power regime at T=7T=7 mK.

preprint2020arXiv

Effect of interfacial oxidation layer in spin pumping experiments on Ni80_{80}Fe20_{20}/SrIrO3_3 heterostructures

SrIrO3_3 with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni80_{80}Fe20_{20} (NiFe)/SrIrO3_3 bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO3_3 bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO3_3 trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO3_3 bilayers.

preprint2020arXiv

Temperature-dependent spin-transport and current-induced torques in superconductor/ferromagnet heterostructures

We investigate the injection of quasiparticle spin currents into a superconductor via spin pumping from an adjacent FM layer.  \;To this end, we use NbN/\ch{Ni80Fe20}(Py)-heterostructures with a Pt spin sink layer and excite ferromagnetic resonance in the Py-layer by placing the samples onto a coplanar waveguide (CPW). A phase sensitive detection of the microwave transmission signal is used to quantitatively extract the inductive coupling strength between sample and CPW, interpreted in terms of inverse current-induced torques, in our heterostructures as a function of temperature. Below the superconducting transition temperature TcT_{\mathrm{c}}, we observe a suppression of the damping-like torque generated in the Pt layer by the inverse spin Hall effect (iSHE), which can be understood by the changes in spin current transport in the superconducting NbN-layer. Moreover, below TcT_{\mathrm{c}} we find a large field-like current-induced torque.

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