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Manu Jaiswal

Manu Jaiswal contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2010arXiv

Correlation of morphology and charge transport in poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT-PSS) films

A wide variation in the charge transport properties of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) films is attributed to the degree of phase-segregation of the excess insulating polyanion. The results indicate that the charge transport in PEDOT-PSS can vary from hopping to critical regime of the metal-insulator transition, depending on the subtle details of morphology. The extent of electrical-connectivity in films, directly obtained from a temperature dependent high-frequency transport study, indicates various limiting factors to the transport, which are correlated with the phase separation process. The low temperature magnetotransport further supports this morphology-dependent transport scenario.

preprint2010arXiv

Field-effect and frequency dependent transport in semiconductor-enriched single-wall carbon nanotube network device

The electrical and optical response of a field-effect device comprising a network of semiconductor-enriched single-wall carbon nanotubes, gated with sodium chloride solution is investigated. Field-effect is demonstrated in a device that uses facile fabrication techniques along with a small-ion as the gate electrolyte - and this is accomplished as a result of the semiconductor enhancement of the tubes. The optical transparency and electrical resistance of the device are modulated with gate voltage. A time-response study of the modulation of optical transparency and electrical resistance upon application of gate voltage suggests the percolative charge transport in the network. Also the ac response in the network is investigated as a function of frequency and temperature down to 5 K. An empirical relation between onset frequency and temperature is determined.

preprint2010arXiv

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 $\times10^{13}/cm^{2}$), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times10^{13}/cm^{2}$, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.