Source author record

Barbaros Oezyilmaz

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci

Catalog footprint

Research overview

5works

2topics

4close collaborators

Actions

Is this your work?

Open graph Browse papers

preprint2014arXiv

Electric field effect in ultrathin black phosphorus

Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO $_2$ and measure charge carrier mobility in a four-probe configuration as well as drain current modulation in a two-point configuration. We find room-temperature mobilities of up to 300 cm $^2$ /Vs and drain current modulation of over 10 $^3$ . At low temperatures the on-off ratio exceeds 10 $^5$ and the device exhibits both electron and hole conduction. Using atomic force microscopy we observe significant surface roughening of thin black phosphorus crystals over the course of 1 hour after exfoliation.

preprint2014arXiv

Transport properties of monolayer MoS $_2$ grown by chemical vapour deposition

Recent success in the growth of monolayer MoS $_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS $_2$ . The devices show low temperature mobilities up to 500 cm $^2$ V $^{-1}$ s $^{-1}$ and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show, that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of phonons as a limiting factor of these devices is discussed.

preprint2010arXiv

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 $\times10^{13}/cm^{2}$ ), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times10^{13}/cm^{2}$ , whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.

preprint2010arXiv

Phonon Transport in Suspended Single Layer Graphene

We report the first temperature dependent phonon transport measurements in suspended Cu-CVD single layer graphene (SLG) from 15K to 380K using microfabricated suspended devices. The thermal conductance per unit cross section $σ$ /A increases with temperature and exhibits a peak near T~280K ( $\pm$ 10K) due to the Umklapp process. At low temperatures (T<140K), the temperature dependent thermal conductivity scales as ~T^{1.5}, suggesting that the main contribution to thermal conductance arises from flexural acoustic (ZA) phonons in suspended SLG. The $σ$ /A reaches a high value of 1.7 $\times10^5 T^{1.5}$ W/m^2K, which is approaching the expected ballistic phonon thermal conductance for two-dimensional graphene sheets. Our results not only clarify the ambiguity in the thermal conductance, but also demonstrate the potential of Cu-CVD graphene for heat related applications.

preprint2009arXiv

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ( $ν$ ) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Barbaros Oezyilmaz

Research overview

Is this your work?

5 publications

Electric field effect in ultrathin black phosphorus

Transport properties of monolayer MoS $_2$ grown by chemical vapour deposition

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Phonon Transport in Suspended Single Layer Graphene

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

See the researcher in context

Building this map preview

Barbaros Oezyilmaz

Research overview

Is this your work?

5 publications

Electric field effect in ultrathin black phosphorus

Transport properties of monolayer MoS2_22​ grown by chemical vapour deposition

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Phonon Transport in Suspended Single Layer Graphene

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

See the researcher in context

Building this map preview

Transport properties of monolayer MoS $_2$ grown by chemical vapour deposition