Erbium Quantum Memory Platform with Long Optical Coherence via Back-End of Line Deposition on Foundry-Fabricated Photonics
Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide ($\mathrm{TiO_2}$) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at sub-Kelvin temperatures with photon echo techniques. We suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 $μ$s (a 5 kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art erbium devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:$\mathrm{TiO_2}$ on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.