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Researcher profile

Manish Chhowalla

Manish Chhowalla contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.chem-ph

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Published work

4 published item(s)

preprint2022arXiv

Recent Advances in Design of Electrocatalysts for High-Current-Density Water Splitting

Electrochemical water splitting technology for producing "green hydrogen" is important for the global mission of carbon neutrality. Electrocatalysts with decent performance at high current densities play a central role in the industrial implementation of this technology. The field has advanced immensely in recent years, as witnessed by many types of catalysts have been designed and synthesized which work at industrially-relevant current densities (> 200 mA cm-2). Note that the activity and stability of catalysts can be influenced by their local reaction environment, which are closely related to the current density. By discussing recent advances in this field, we summarize several key aspects that affect the catalytic performance for high-current-density electrocatalysis, including dimensionality of catalysts, surface chemistry, electron transport path, morphology, and catalyst-electrolyte interplay. We highlight the multiscale design strategy that considers these aspects comprehensively for developing high-current-density catalysts. We also put forward out perspectives on the future directions in this emerging field.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts.

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preprint2020arXiv

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.

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preprint2019arXiv

Electronic polarizability as the fundamental variable in the dielectric properties of two-dimensional materials

The dielectric constant, which defines the polarization of the media, is a key quantity in condensed matter. It determines several electronic and optoelectronic properties important for a plethora of modern technologies from computer memory to field effect transistors and communication circuits. Moreover, the importance of the dielectric constant in describing electromagnetic interactions through screening plays a critical role in understanding fundamental molecular interactions. Here we show that despite its fundamental transcendence, the dielectric constant does not define unequivocally the dielectric properties of two-dimensional (2D) materials due to the locality of their electrostatic screening. Instead, the electronic polarizability correctly captures the dielectric nature of a 2D material which is united to other physical quantities in an atomically thin layer. We reveal a long-sought universal formalism where electronic, geometrical and dielectric properties are intrinsically correlated through the polarizability opening the door to probe quantities yet not directly measurable including the real covalent thickness of a layer. We unify the concept of dielectric properties in any material dimension finding a global dielectric anisotropy index defining their controllability through dimensionality.

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