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Malte Backhaus

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physics.ins-det hep-ex

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preprint2022arXiv

muEDM: Towards a search for the muon electric dipole moment at PSI using the frozen-spin technique

The search for a permanent electric dipole moment (EDM) of the muon is an excellent probe for physics beyond the Standard Model of particle physics. We propose the first dedicated muon EDM search employing the frozen-spin technique at the Paul Scherrer Institute (PSI), Switzerland, with a sensitivity of $6 \times 10^{-23}~e\!\cdot\!\mathrm{cm}$, improving the current best limit set by the E821 experiment at Brookhaven National Laboratory by more than three orders of magnitude. In preparation for a high precision experiment to measure the muon EDM, several R&D studies have been performed at PSI: the characterisation of a possible beamline to host the experiment for the muon beam injection study and the measurement of the multiple Coulomb scattering of positrons in potential detector materials at low momenta for the positron tracking scheme development. This paper discusses experimental concepts and the current status of the muEDM experiment at PSI.

preprint2013arXiv

Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade

The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3 x 10^34 cm^-2 s^-1 with an integrated luminosity over the IBL lifetime of 300 fb^-1 corresponding to a design lifetime fluence of 5 x 10^15 n_eq cm^-2 and ionizing dose of 250 Mrad including safety factors. The production front-end electronics FE-I4B for the IBL has been fabricated at the end of 2011 and has been extensively characterized on diced ICs as well as at the wafer level. The production tests at the wafer level were performed during 2012. Selected results of the diced IC characterization are presented, including measurements of the on-chip voltage regulators. The IBL powering scheme, which was chosen based on these results, is described. Preliminary wafer to wafer distributions as well as yield calculations are given.

preprint2012arXiv

Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

The ATLAS Insertable B-Layer (IBL) collaboration plans to insert a fourth pixel layer inside the present Pixel Detector to recover from eventual failures in the current pixel system, especially the b-layer. Additionally the IBL will ensure excellent tracking, vertexing and b-tagging performance during the LHC phase I and add robustness in tracking with high luminosity pile-up. The expected peak luminosity for IBL is 2 to 3centerdot1034 cm-2s-1 and IBL is designed for an integrated luminosity of 700 fb-1. This corresponds to an expected fluence of 5centerdot1015 1 MeV neqcm-2 and a total ionizing dose of 250 MRad. In order to cope with these requirements, two new module concepts are under investigation, both based on a new front end IC, called FE-I4. This IC was designed as readout chip for future ATLAS Pixel Detectors and its first application will be the IBL. The planar pixel sensor (PPS) based module concept benefits from its well understood design, which is kept as similar as possible to the design of the current ATLAS Pixel Detector sensor. The second approach of the new three dimensional (3D) silicon sensor technology benefits from the shorter charge carrier drift distance to the electrodes, which completely penetrate the sensor bulk. Prototype modules of both sensor concepts have been build and tested in laboratory and test beam environment before and after irradiation. Both concepts show very high performance even after irradiation to 5centerdot1015 1 MeV neqcm-2 and meet the IBL specifications in terms of hit efficiency being larger than 97%. Lowest operational threshold studies have been effected and prove independent of the used sensor concept the excellent performance of FE-I4 based module concepts in terms of noise hit occupancy at low thresholds.