Researcher profile

Mali Gong

Mali Gong contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

High-dimensional classically entangled light from a laser

Vectorially structured light has emerged as an enabling tool in many diverse applications, from communication to imaging, exploiting quantum-like correlations courtesy of a non-separable spatially varying polarization structure. Creating these states at the source remains challenging and is presently limited to two-dimensional vectorial states by customized lasers. Here we invoke ray-wave duality in a simple laser cavity to produce polarization marked multi-path modes that are non-separable in three degrees of freedom and in eight dimensions. As a topical example, we use our laser to produce the complete set of Greenberger-Horne-Zeilinger (GHZ) basis states, mimicking high-dimensional multi-partite entanglement with classical light, which we confirm by a new projection approach. We offer a complete theoretical framework for our laser based on SU(2) symmetry groups, revealing a rich parameter space for further exploitation. Our approach requires only a conventional laser with no special optical elements, is easily scaleable to higher dimensions, and offers a simple but elegant solution for at-the-source creation of classically entangled states of structured light, opening new applications in simulating and enhancing high-dimensional quantum systems.

preprint2020arXiv

Ultrafast two-photon emission in a doped semiconductor thin film

As a high-order quantum transition, two-photon emission has an extremely low occurrence rate compared to one-photon emission, thus having been considered a forbidden process. Here, we propose a scheme that allows ultrafast two-photon emission, leveraging highly confined surface plasmon polariton modes in a degenerately-doped, light-emitting semiconductor thin film. The surface plasmon polariton modes are tailored to have simultaneous spectral and spatial overlap with the two-photon emission in the semiconductor. Using degenerately-doped InSb as the prototype material, we show that the two-photon emission can be accelerated by 10 orders of magnitude: from tens of milliseconds to picoseconds, surpassing the one-photon emission rate. Our result provides a semiconductor platform for ultrafast single and entangled photon generation, with a tunable emission wavelength in the mid-infrared.