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Mahmoud M. Asmar

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.supr-con

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preprint2021arXiv

Andreev spectroscopy of nonhelical spin textures in topological insulators

We study how nonhelical spin textures affect the proximity-induced superconductivity of topological insulator (TI)-superconductor (SC) interface states. In particular we calculate the conductance of lateral heterojunctions which comprise a TI surface that is only partially covered by a superconducting material. Interface potentials at the TI-SC interface may lead to a Fermi velocity and spin texture mismatch between the two regions of the lateral heterojunction. By enforcing the hermiticity of the total Hamiltonian, we derive the boundary conditions and calculate the conductance of the structure in both the normal and superconducting state. The total Andreev conductance is calculated for both $s$-wave and spin-triplet parent SCs, and for several examples of nonhelical spin textures which lead to different Fermi surface mismatches between the two planar regions of the heterojunction. We find that for spin-triplet SCs, nonzero conductance signatures only appear for certain combinations of nonhelical spin textures and parent superconducting material.

preprint2020arXiv

Electron-Hole Asymmetry of Surface States in Topological Insulator Sb2Te3 Thin Films Revealed by Magneto-Infrared Spectroscopy

When surface states (SSs) form in topological insulators (TIs), they inherit the properties of bulk bands, including the electron-hole (e-h) asymmetry but with much more profound impacts. Here, via combining magneto-infrared spectroscopy with theoretical analysis, we show that e-h asymmetry significantly modifies the SS electronic structures when interplaying with the quantum confinement effect. Compared to the case without e-h asymmetry, the SSs now bear not only a band asymmetry as that in the bulk but also a shift of the Dirac point relative to the bulk bands and a reduction of the hybridization gap up to 70%. Our results signify the importance of e-h asymmetry in band engineering of TIs in the thin film limit.

preprint2020arXiv

Non-Equilibrium RKKY Interaction in Irradiated Graphene

We demonstrate that the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in graphene can be strongly modified by a time-periodic driving field even in the weak drive regime. This effect is due to the opening of a dynamical band gap at the Dirac points when graphene is exposed to circularly polarized light. Using Keldysh-Floquet Green's functions, we develop a theoretical framework to calculate the time-averaged RKKY coupling under weak periodic drives and show that its magnitude in undoped graphene can be decreased controllably by increasing the driving strength, while mostly maintaining its ferromagnetic or antiferromagnetic character. In doped graphene, we find RKKY oscillations with a period that is tunable by the driving field. When a sufficiently strong drive is turned on that brings the Fermi level completely within the dynamically opened gap, the behavior of the RKKY coupling changes qualitatively from that of doped to undoped irradiated graphene.

preprint2016arXiv

Mass inversion in graphene by proximity to dichalcogenide monolayer

Proximity effects resulting from depositing a graphene layer on a TMD substrate layer change the dynamics of the electronic states in graphene, inducing spin orbit coupling (SOC) and staggered potential effects. An effective Hamiltonian that describes different symmetry breaking terms in graphene, while preserving time reversal invariance, shows that an inverted mass band gap regime is possible. The competition of different perturbation terms causes a transition from an inverted mass phase to a staggered gap in the bilayer heterostructure, as seen in its phase diagram. A tight-binding calculation of the bilayer validates the effective model parameters. A relative gate voltage between the layers may produce such phase transition in experimentally accessible systems. The phases are characterized in terms of Berry curvature and valley Chern numbers, demonstrating that the system may exhibit quantum spin Hall and valley Hall effects.

preprint2015arXiv

Symmetry breaking effects on spin and electronic transport in graphene

The decoration of graphene samples with adatoms or nanoparticles leads to the enhancement of spin-orbit interactions as well as to the introduction of symmetry-breaking effects that could have drastic effects on spin and electronic transport phenomena. We present an analysis based on symmetry considerations and examine the impact on the scattering matrix for graphene systems containing defects that enhance spin-orbit interactions, while conserving the electronic total angular momentum. We show that the appearance and dominance of skew scattering, and the related observation of valley and/or spin Hall effect in decorated graphene samples, suggests the set of symmetries that adatom perturbations should satisfy. We further show that detailed measurements of the transport and elastic times as a function of carrier concentration make it possible to not only extract the strength of the spin-orbit interaction, as suggested before, but also obtain the amplitude of the symmetry-breaking terms introduced. To examine how different terms would affect measurements, we also present calculations for typical random distributions of impurities with different perturbations, illustrating the detailed energy dependence of different observables

preprint2013arXiv

Spin Orbit Interaction and Isotropic Electronic Transport in Graphene

Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of the transport to elastic times for massless electrons signals the anisotropy of the scattering. We show that SOIs lead to a drastic decrease of this ratio, especially at low carrier concentrations, while the scattering becomes increasingly isotropic. As the strength of the SOI determines the energy (carrier concentration) where this drop is more evident, this effect could help evaluate these interactions through transport measurements.

preprint2012arXiv

Rashba Spin Orbit Interaction and Birefringent Electron Optics in Graphene

Electron optics exploits the analogies between rays in geometrical optics and electron trajectories, leading to interesting insights and potential applications. Graphene, with its two-dimensionality and photon-like behavior of its charge carriers, is the perfect candidate for the exploitation of electron optics. We show that a circular gate-controlled region in the presence of Rashba spin-orbit interaction in graphene may indeed behave as a Veselago electronic lens but with two different indices of refraction. We demonstrate that this birefringence results in complex caustics patterns for a circular gate, selective focusing of different spins, and the possible direct measurement of the Rashba coupling strength in scanning probe experiments.