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Researcher profile

Mahesh Kumar

Mahesh Kumar contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.othercond-mat.supr-conphysics.app-ph

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Published work

5 published item(s)

preprint2022arXiv

Revealing the Charge Transfer Dynamics Between Singlet Fission Molecule and Hybrid Perovskite Nanocrystals

Singlet fission process has gained considerable attention because of its potential to enhance photovoltaic efficiency and break the Shockley Queisser limit. In photovoltaic devices perovskite materials have shown tremendous progress in the last decade. Therefore combining the singlet fission materials in perovskite devices can lead to a drastic enhancement in their performance. To reveal the applicability of singlet fission processes in perovskite materials we have investigated the charge transfer dynamics from an SF active material 910 bis phenylethynyl anthracene to CH3NH3PbBr3 perovskite nanocrystals using the transient absorption spectroscopy. We observed a significant charge transfer from the coupled triplet state of BPEA to conduction band of CH3NH3PbBr3 in picosecond timescale. The observation of shortened lifetime in a mixture of BPEA and CH3NH3PbBr3 nanocrytals confirms the significant charge transfer between these systems. Our study reveals the charge transfer mechanism in singlet fission perovskite composite which will help to develop an advanced photovoltaic system.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electron-Phonon Coupling, Thermal Expansion Coefficient, Resonance Effect and Phonon Dynamics in High Quality CVD Grown Mono and Bilayer MoSe2

Probing phonons, quasi-particle excitations and their coupling has enriched our understanding of these 2D materials and proved to be crucial for developing their potential applications. Here, we report comprehensive temperature, 4-330 K, and polarization-dependent Raman measurements on mono and bilayer MoSe2. Phonon's modes up to fourth-order are observed including forbidden Raman and IR modes, understood considering Frohlich mechanism of exciton-phonon coupling. Most notably, anomalous variations in the phonon linewidths with temperature pointed at the significant role of electron-phonon coupling in these systems, especially for the out-of-plane (A1g) and shear mode (E22g), which is found to be more prominent in the narrow-gaped bilayer than the large gapped monolayer. Via polarization-dependent measurements, we deciphered the ambiguity in symmetry assignments, especially to the peaks around ~ 170 cm-1 and ~ 350 cm-1. Temperature-dependent thermal expansion coefficient, an important parameter for the device performance, is carefully extracted for both mono and bilayer by monitoring the temperature-dependence of the real-part of the phonon self-energy parameter. Our temperature-dependent in-depth Raman studies provide a pave for uncovering the deeper role of phonons in these 2D layered materials from a fundamental as well as application point of view.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anisotropic Electron-Photon-Phonon Coupling in Layered MoS2

Transition metal dichalcogenide, especially MoS2 has attracted lot of attention recently owing to its tunable visible range band gap and anisotropic electronic and transport properties. Here, we report a comprehensive inelastic light scattering measurements on CVD grown (horizontally and vertically aligned flakes) as well as single crystal flakes of MoS2, probing the anisotropic optical response via studying the polarization dependence intensity of the Raman active phonon modes as a function of different incident photon energy and flake thickness. Our polarization dependent Raman studies intriguingly revealed strong anisotropic behavior reflected in the anomalous renormalization of the modes intensity as a function of flake thickness, phonons and photon energy. Our observations reflects the strong anisotropic light-matter interaction in this high crystalline symmetric layered MoS2 system especially for the in-plane vibrations, which is crucial for understanding as well application of these materials for future application such as optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exploration of terahertz from time-resolved ultrafast spectroscopy in single-crystal Bi2Se3 topological insulator

In this article, we reconnoiter the differential reflection signal of a Bi2Se3 single crystal flake, using ultrafast transient absorption spectroscopy in the femtosecond time domain and thereby explore the experimental data in terms of terahertz frequency generated in the sample. An exfoliated flake of a well characterized self-flux grown bulk Bi2Se3 single crystal having rhombohedral structure and layered morphology is used in the present study. The kinetic profile of the same being generated through a reflection signal by a pump laser of 650 nm at an average power of 0.5 mW is studied utilizing time-resolved ultrafast technique. The silhouette as a function of probe delay predicting the capability of the terahertz generation is estimated. Here, two methods FFT (fast Fourier transformation) and FFD (filtering high-frequency component followed by fitting data) are performed to estimate the value of terahertz generated in the system. While comparing the two (FFT & FFD) it is found that a large amount of magnitude difference occurs in the prediction of terahertz frequency. Summarily, we not only report the generation of terahertz in Bi2Se3 flake, also but points out that the exact order of magnitude and the capability of the same depends upon the method of analysis. It is important to extract the vibration signal from the background one so that to find the exact order of magnitude and capability of terahertz generation by any quantum material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Metal Doping in Topological Insulators- A Key for Tunable Generation of Terahertz

The unique surface edge states make topological insulators a primary focus among different applications. In this article, we synthesized a large single crystal of Niobium(Nb)-doped Bi2Se3 topological insulator (TI) with a formula Nb0.25Bi2Se3. The single crystal has characterized by using various techniques such as Powder X-ray Diffractometer (PXRD), DC magnetization measurements, Raman, and Ultrafast transient absorption spectroscopy (TRUS). There are (00l) reflections in the PXRD, and Superconductivity ingrown crystal is evident from clearly visible diamagnetic transition at 2.5K in both FC and ZFC measurements. The Raman spectroscopy is used to find the different vibrational modes in the sample. Further, the sample is excited by a pump of 1.90 eV, and a kinetic decay profile at 1.38 eV is considered for terahertz analysis. The differential decay profile has different vibrations, and these oscillations have analyzed in terms of terahertz. This article not only provides evidence of terahertz generation in Nb-doped sample along with undoped sample but also show that the dopant atom changes the dynamics of charge carriers and thereby the shift in the Terahertz frequency response. In conclusion, a suitable dopant can be used as a processor for the tunability of terahertz frequency in TI.

0 citations0 reviewsNo code linkedOpen access