Researcher profile

Mahesh G. Samant

Mahesh G. Samant contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Mesoscopic structural phase progression in photo-excited VO2 revealed by time-resolved x-ray diffraction microscopy

Dynamical phase separation during a solid-solid phase transition poses a challenge for understanding the fundamental processes in correlated materials. Critical information underlying a phase transition, such as localized phase competition, is difficult to reveal by measurements that are spatially averaged over many phase separated regions. The ability to simultaneously track the spatial and temporal evolution of such systems is essential to understanding mesoscopic processes during a phase transition. Using state-of-the-art time-resolved hard x-ray diffraction microscopy, we directly visualize the structural phase progression in a VO2 film upon photoexcitation. Following a homogenous in-plane optical excitation, the phase transformation is initiated at discrete sites and completed by the growth of one lattice structure into the other, instead of a simultaneous isotropic lattice symmetry change. The time-dependent x-ray diffraction spatial maps show that the in-plane phase progression in laser-superheated VO2 is via a displacive lattice transformation as a result of relaxation from an excited monoclinic phase into a rutile phase. The speed of the phase front progression is quantitatively measured, and is faster than the process driven by in-plane thermal diffusion but slower than the sound speed in VO2. The direct visualization of localized structural changes in the time domain opens a new avenue to study mesoscopic processes in driven systems.

preprint2014arXiv

Extreme Ultraviolet Transient Grating Spectroscopy of Vanadium Dioxide

Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO2 film with EUV diffraction from the optically excited sample. The VO2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.

preprint2012arXiv

Electronic and crystalline structures of zero band-gap PdLuBi thin films grown epitaxially on MgO(100)

Thin films of the proposed topological insulator PdLuBi - a Heusler compound with the C1b structure - were prepared on Ta-Mo-buffered MgO(100) substrates by co-sputtering from PdBi2 and Lu targets. Epitaxial growth of high-quality PdLuBi films was confirmed by X-ray spectrometry and reflection high-energy electron diffraction. The root-mean-square roughness of the films was as low as 1.45 nm, although the films were deposited at high temperature. The film composition is close to the ideal stoichiometric ratio. The valence band spectra of the PdLuBi films, observed by hard X-ray photoelectron spectroscopy, correspond perfectly to the ab-initio-calculated density of states.