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Mahdi Ghorbani-Asl

Mahdi Ghorbani-Asl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-ph

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Published work

5 published item(s)

preprint2021arXiv

Data-driven quest for two-dimensional non-van der Waals materials

Two-dimensional (2D) materials are frequently associated with the sheets which form bulk layered compounds bonded by van der Waals (vdW) forces. The anisotropy and weak interaction between the sheets have also been the main criteria in the computational search for new 2D systems, which predicted about 2000 exfoliable compounds. However, several representatives of a new type of non-vdW 2D systems, such as hematene or ilmenene, which have no layered 3D analogues, and which, unlike, e.g. silicene, do not need to strongly interact with the substrate to be stable, were recently manufactured. The family of non-vdW 2D materials is an attractive playground for data-driven high-throughput approaches as computational design principles are still missing. Here, we outline a new set of 8 binary and 20 ternary candidates by filtering the AFLOW-ICSD database according to the structural prototype of the first two template systems realized in experiment. All materials show a strong structural relaxation upon confinement to 2D which is essential to correctly estimate the bonding strength between facets. The oxidation state of the cations at the surface of the sheets is demonstrated to regulate the inter-facet binding energy with low oxidation states leading to weak bonding. We anticipate this descriptor to be highly useful to obtain novel 2D materials, providing clear guidelines for experiments. Our calculations further indicate that the materials exhibit a vast range of appealing electronic, optical and magnetic properties, which is expected to also make them attractive for potential applications particularly in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nearly Free Electron States in MXenes

Using a set of first-principles calculations, we studied the electronic structures of two-dimensional transition metal carbides and nitrides, so called MXenes, functionalized with F, O, and OH. Our projected band structures and electron localization function analyses reveal the existence of nearly free electron (NFE) states in variety of MXenes. The NFE states are spatially located just outside the atomic structure of MXenes and are extended parallel to the surfaces. Moreover, we found that the OH-terminated MXenes offer the NFE states energetically close to the Fermi level. In particular, the NFE states in some of the OH-terminated MXenes, such as Ti2C(OH)2, Zr2C(OH)2, Zr2N(OH)2, Hf2C(OH)2, Hf2N(OH)2, Nb2C(OH)2, and Ta2C(OH)2, are partially occupied. This is in remarkable contrast to graphene, graphane, and MoS2, in which their NFE states are located far above the Fermi level and thus they are unoccupied. As a prototype of such systems, we investigated the electron transport properties of Hf2C(OH)2 and found that the NFE states in Hf2C(OH)2 provide almost perfect transmission channels without nuclear scattering for electron transport. Our results indicate that these systems might find applications in nanoelectronic devices. Our findings provide new insights into the unique electronic band structures of MXenes.

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preprint2013arXiv

Defect-induced conductivity anisotropy in MoS2 monolayers

Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the Density-Functional based Tight-Binding method in conjunction with the Green's Function approach. Intrinsic defects in MoS2 monolayers significantly affect their electronic properties. Even at low concentration they considerably alter the quantum conductance. While the electron transport is practically isotropic in pristine MoS2, strong anisotropy is observed in the presence of defects. Localized mid-gap states are observed in semiconducting MoS2 that do not contribute to the conductivity but direction-dependent scatter the current, and that the conductivity is strongly reduced across line defects and selected grain boundary models.

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preprint2013arXiv

Electromechanics in MoS2 and WS2: nanotubes vs. monolayers

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD monolayers, but state-of-the-art for TMD nanotubes. We show using density-functional theory that similar electromechanical properties as in monolayer and bulk TMDs are found for large diameter TMD single- (SWNT) and multi-walled nanotubes (MWNTs). The semiconductor-metal transition occurs at elongations of 16 %. We show that Raman spectroscopy is an excellent tool to determine the strain of the nanotubes and hence monitor the progress of that nanoelectromechanical experiment in situ. TMD MWNTs show twice the electric conductance compared to SWNTs, and each wall of the MWNTs contributes to the conductance proportional to its diameter.

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preprint2013arXiv

Strain-dependent modulation of conductivity in single layer transition-metal dichalcogenides

Quantum conductance calculations on the mechanically deformed monolayers of MoS$_2$ and WS$_2$ were performed using the non-equlibrium Green's functions method combined with the Landauer-Büttiker approach for ballistic transport together with the density-functional based tight binding (DFTB) method. Tensile strain and compression causes significant changes in the electronic structure of TMD single layers and eventually the transition semiconductor-metal occurs for elongations as large as ~11% for the 2D-isotropic deformations in the hexagonal structure. This transition enhances the electron transport in otherwise semiconducting materials.

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