Researcher profile

Maciej W. Olszewski

Maciej W. Olszewski contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

Low-loss Nb on Si superconducting resonators from a dual-use spintronics deposition chamber and with acid-free post-processing

Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for making high-quality superconducting resonator devices. In this article, we show by example that such chambers can be used for this purpose; with Nb films sputtered in a chamber that continues to be used for magnetic materials, we demonstrate compact (\SI{3}{\micro\meter} gap) coplanar waveguide resonators with low-power internal quality factors near one million. We achieve this using a resist strip bath with no post-fabrication acid treatment, which results in performance comparable to previous strip baths with acid treatments. We also find evidence that this improved resist strip bath provides a better surface chemical template for post-fabrication hydrogen fluoride processing. These results are consistent across three Si substrate preparation methods, including a \SI{700}{\celsius} anneal. These results will inform nanofabrication for other superconducting materials and the integration of magnetic materials for hybrid systems.

preprint2025arXiv

Spectroscopy and Coherent Control of Two-Level System Defect Ensembles Using a Broadband 3D Waveguide

Defects in solid-state materials play a central role in determining coherence, stability, and performance in quantum technologies. Although narrowband techniques can probe specific resonances with high precision, a broadband spectroscopic approach captures the full spectrum of defect properties and dynamics. Two-level system (TLS) defects in amorphous dielectrics are a particularly important example because they are major sources of decoherence and energy loss in superconducting quantum devices. However, accessing and characterizing their collective dynamics remains far more challenging than probing individual TLS defects. Building on our previously developed Broadband Cryogenic Transient Dielectric Spectroscopy (BCTDS) technique, we study the coherent control and time-resolved dynamics of TLS defect ensembles over a wide frequency range of 3-5 GHz without requiring full device fabrication, revealing quantum interference effects, memory-dependent dynamics, and dressed-state evolution within the TLS defect bath. The spectral response reveals distinct V-shaped structures corresponding to the bare eigenmode frequencies. Using these features, we extract a TLS defect spectral density of 84 GHz^-1 for a silicon sample, across a 4.1-4.6 GHz span. Furthermore, we systematically investigate amplitude- and phase-controlled interference fringes for multiple temperatures and inter-pulse delays, providing direct evidence of coherent dynamics and control. A driven minimal spin model with dipole-dipole interactions that qualitatively capture the observed behavior is presented. Our results establish BCTDS as a versatile platform for broadband defect spectroscopy, offering new capabilities for diagnosing and mitigating sources of decoherence, engineering many-body dynamics, and exploring non-equilibrium phenomena in disordered quantum systems.