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M. Xia

M. Xia appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.supr-concond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2014arXiv

Angle-resolved Photoemission Spectroscopy Study on the Surface States of the Correlated Topological Insulator YbB6

We report the electronic structure of YbB6, a recently predicted moderately correlated topological insulator, measured by angle-resolved photoemission spectroscopy. We directly observed linearly dispersive bands around the time-reversal invariant momenta Γ and X with negligible kz dependence, consistent with odd number of surface states crossing the Fermi level in a Z2 topological insulator. Circular dichroism photoemission spectra suggest that these in-gap states possess chirality of orbital angular momentum, which is related to the chiral spin texture, further indicative of their topological nature. The observed insulating gap of YbB6 is about 100 meV, larger than that reported by theoretical calculations. Our results present strong evidence that YbB6 is a correlated topological insulator and provide a foundation for further studies of this promising material.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Critical role of substrate in the high temperature superconductivity of single layer FeSe on Nb:BaTiO$_3$

In the quest for high temperature superconductors, the interface between a metal and a dielectric was proposed to possibly achieve very high superconducting transition temperature ($T_c$) through interface-assisted pairing. Recently, in single layer FeSe (SLF) films grown on SrTiO$_3$ substrates, signs for $T_c$ up to 65~K have been reported. However, besides doping electrons and imposing strain, whether and how the substrate facilitates the superconductivity are still unclear. Here we report the growth of various SLF films on thick BaTiO$_3$ films atop KTaO$_3$ substrates, with signs for $T_c$ up to $75$~K, close to the liquid nitrogen boiling temperature. SLF of similar doping and lattice is found to exhibit high $T_c$ only if it is on the substrate, and its band structure strongly depends on the substrate. Our results highlight the profound role of substrate on the high-$T_c$ in SLF, and provide new clues for understanding its mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic structure of the BaTi$_2$As$_2$O parent compound of the titanium based oxypnictide superconductor

The electronic structure of BaTi2As2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by angle-resolved photoemission spectroscopy. The electronic structure shows multi-orbital nature and possible three-dimensional character. An anomalous temperature-dependent spectral weight redistribution and broad lineshape indicate the incoherent nature of the spectral function. At the density-wave-like transition temperature around 200 K, a partial gap opens at the Fermi patches. These findings suggest that BaTi2As2O is likely a charge density wave material in the strong interaction regime.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An ARPES Study of the Electronic Structure of the Quantum Spin Liquid EtMe3Sb[Pd(dmit)2]2

The electronic structure of a quantum spin liquid compound, EtMe3Sb[Pd(dmit)2]2, has been studied with angle-resolved photoemission spectroscopy, together with two other Pd(dmit)2 salts in the valence bond solid or antiferromagnetic state. We have resolved several bands that have negligible dispersions and fit well to the calculated energy levels of an isolated [Pd(dmit)2]2 dimer. EtMe3Sb[Pd(dmit)2]2 being a Mott insulator, its lower Hubbard band is identified, and there is a small gap of ~ 50 meV between this band and the chemical potential. Moreover, the spectral features exhibit polaronic behavior with anomalously broad linewidth. Compared with existing theories, our results suggest that strong electron-boson interactions, together with smaller hopping and on-site Coulomb interaction terms have to be considered for a realistic modeling of the organic quantum spin liquid systems like the Pd(dmit)2 salt.

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preprint2013arXiv

Electronic Structure Reconstruction across the Antiferromagnetic Transition in TaFe$_{1.23}$Te$_3$ Spin Ladder

With angle-resolved photoemission spectroscopy, we studied the electronic structure of TaFe$_{1.23}$Te$_3$, which is a two-leg spin ladder compound with a novel antiferromagnetic ground state. Quasi-two-dimensional Fermi surface is observed, indicating sizable inter-ladder hopping, which would facilitate the in-plane ferromagnetic ordering through double exchange interactions. Moreover, an energy gap is not observed at the Fermi surface in the antiferromagnetic state. Instead, the shifts of various bands have been observed. Combining these observations with density-functional-theory calculations, we propose that the large scale reconstruction of the electronic structure, caused by the interactions between the coexisting itinerant electrons and local moments, is most likely the driving force behind the magnetic transition. TaFe$_{1.23}$Te$_3$ thus provides a simpler system that contains similar ingredients as the parent compounds of iron-based superconductors, which yet could be readily modeled and understood.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhanced superconductivity and evidence for novel pairing in single-layer FeSe on SrTiO3 thin film under large tensile strain

Single-layer FeSe films with extremely expanded in-plane lattice constant of 3.99A are fabricated by epitaxially growing FeSe/Nb:SrTiO3/KTaO3 heterostructures, and studied by in situ angle-resolved photoemission spectroscopy. Two elliptical electron pockets at the Brillion zone corner are resolved with negligible hybridization between them, indicating the symmetry of the low energy electronic structure remains intact as a free-standing single-layer FeSe, although it is on a substrate. The superconducting gap closes at a record high temperature of 70K for the iron based superconductors. Intriguingly, the superconducting gap distribution is anisotropic but nodeless around the electron pockets, with minima at the crossings of the two pockets. Our results put strong constraints on the current theories, and support the coexistence of both even and odd parity spin-singlet pairing channels as classified by the lattice symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interface-induced superconductivity and strain-dependent spin density wave in FeSe/SrTiO3 thin films

The record of superconducting transition temperature(Tc) has long been 56K for the iron-based high temperature superconductors(Fe-HTS's). Recently, in single layer FeSe films grown on SrTiO3 substrate, signs for a new 65K Tc record are reported. Here with in-situ photoemission measurements, we substantiate the presence of the spin density wave(SDW) in FeSe films, a key ingredient of Fe-HTS that was missed in FeSe before, which weakens with increased thickness or reduced strain. We demonstrate that the superconductivity occurs when the electrons transferred from the oxygen-vacant substrate suppress the otherwise most pronounced SDW in single layer FeSe. Besides providing a comprehensive understanding of FeSe films and directions to further enhance its Tc, we establish the phase diagram of FeSe vs. lattice constant that contains all the essential physics of Fe-HTS's. With the simplest structure, cleanest composition and single tuning parameter, it is ideal for testing theories of Fe-HTS's.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation of in-gap surface states in the Kondo insulator SmB6 by photoemission

Kondo insulators (KIs) are strongly correlated materials in which the interactions between 4f and conduction electrons lead to a hybridization gap opening at low temperature 1-2. SmB6 is a typical KI, but its resistivity does not diverge at low temperatures, which was attributed to some in-gap states 3-10. However after several decades of research, the nature and origin of the in-gap states remain unclear. Recent band calculation and transport measurements suggest that the in-gap states could actually be ascribed to topological surface states. SmB6 thus might be the first realization of topological Kondo insulator (TKI) 13, the strongly correlated version of topological insulator (TI) 11,12. Here by performing angle-resolved photoemission spectroscopy (ARPES), we directly observed several dispersive states within the hybridization gap of SmB6, which cross the Fermi level and show negligible kz dependence, indicative of their surface origin. Furthermore, the circular dichroism (CD) ARPES results of the in-gap states suggest the chirality of orbital momentum, and temperature dependent measurements have shown that the in-gap states vanish simultaneously with the hybridization gap around 150 K. These strongly suggest their possible topological origin.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The origin of the dead-layer at the La0.67Sr0.33MnO3/SrTiO3 interface and dead-layer reduction via interfacial engineering

Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present the systematic study of the dead-layer behavior in La0.67Sr0.33MnO3 thin film grown on SrTiO3 substrate with ozone assisted molecular beam epitaxy. We found that the evolution of electric and magnetic properties as a function of thickness shows a remarkable resemblance to the phase diagram as a function of doping for bulk materials, providing compelling evidences of the hole depletion in near interface layers that causes dead-layer. Detailed electronic and surface structure studies indicate that the hole depletion is due to the intrinsic oxygen vacancy formation. Furthermore, we show that oxygen vacancies are partly caused by interfacial electric dipolar field, and thus by doping-engineering at the single-atomic-layer level, we demonstrate the dead-layer reduction in films with higher interfacial hole concentration.

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