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M. X. Chen

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Published work

6 published item(s)

preprint2016arXiv

Designing substrates for silicene and germanene: First-principles calculations

We propose a guideline for exploring substrates that stabilize the monolayer honeycomb structure of silicene and germanene while simultaneously preserve the Dirac states: in addition to have a strong binding energy to the monolayer, a suitable substrate should be a large-gap semiconductor with a proper workfunction such that the Dirac point lies in the gap and far from the substrate states when their bands align. We illustrate our idea by performing first-principles calculations for silicene and germanene on the Al-terminated (0001) surface of Al2O3 . The overlaid monolayers on Al-terminated Al2O3(0001) retain the main structural profile of the low-buckled honeycomb structure via a binding energy comparable to the one between silicene and Ag(111). Unfolded band structure derived from the k-projection method reveals that gapped Dirac cone is formed at the K point due to the structural distortion and the interaction with the substrate. The gaps of 0.4 eV and 0.3 eV respectively for the supported silicene and germanene suggest that they may have potential applications in nanoelectronics.

preprint2016arXiv

Half-metallic Dirac cone in zigzag-graphene-nanoribbon/graphene

The Dirac electrons of graphene, an intrinsic zero gap semiconductor, uniquely carry spin and pseudospin that give rise to many fascinating electronic and transport properties. While isolated zigzag graphene nanoribbons are antiferromagnetic semiconductors, we show by means of first-principles and tight-binding calculations that zigzag graphene nanoribbons supported on graphene are half-metallic as a result of spin- and pseudospin-symmetry breaking. In particular, half-metallic Dirac cones are formed at K (K') near the Fermi level. The present results demonstrate that the unique combination of spin and pseudospin in zigzag graphene nanoribbons may be used to manipulate the electronic properties of graphene, and may have practical implications for potential graphene-based nanoelectronic applications.

preprint2014arXiv

Electronic thermal conductivity as derived by density functional theory

Reliable evaluation of the lattice thermal conductivity is of importance for optimizing the figure-of-merit of thermoelectric materials. Traditionally, when deriving the phonon mediated thermal conductivity $κ_{ph} = κ- κ_{el}$ from the measured total thermal conductivity $κ$ the constant Lorenz number $L_0$ of the Wiedemann-Franz law \mbox{$\mathbf{κ_{el}}=T L_0 σ$} is chosen. The present study demonstrates that this procedure is not reliable when the Seebeck coefficient $|S|$ becomes large which is exactly the case for a thermoelectric material of interest. Another approximation using $L_0-S^2$, which seem to work better for medium values of $S^2$ also fails when $S^2$ becomes large, as is the case when the system becomes semiconducting/insulating. For a reliable estimation of $κ_{el}$ it is proposed, that a full first-principles calculations by combining density functional theory with Boltzmann's transport theory has to be made. For the present study such an approach was chosen for investigating the clathrate type-I compound Ba$_8$Au$_{6-x}$Ge$_{40+x}$ for a series of dopings or compositions $x$. For a doping of $0.8$ electrons corresponding to $x=0.27$ the calculated temperature dependent Seebeck coefficient agrees well with recent experiments corroborating the validity of the density functional theory approach.

preprint2014arXiv

Revealing the substrate origin of the linear dispersion of silicene/Ag(111)

The band structure of the recently synthesized (3$\times$3) silicene monolayer on (4$\times$4) Ag(111) is investigated using density functional theory. A $k$-projection technique that includes the $k_\bot$-dependence of the surface bands is used to separate the contributions arising from the silicene and the substrate, allowing a consistent comparison between the calculations and the angle-resolved photoemission experiments. Our calculations not only reproduce the observed gap and linear dispersion across the K point of (1$\times$1) silicene, but also demonstrate that these originate from the $k_\bot$-dependence of Ag(111) substrate states (modified by interactions with the silicene) and \textit{not} from a Dirac state.

preprint2012arXiv

Optimizing thermoelectric properties of filled MPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites by band engineering

On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPt$_4$Ge$_{12-x}$Sb$_x$ with M=Ba,La,Th. It is predicted that the originally very small absolute values of Seebeck coefficients $|S|$ of the undoped compounds is increased by factors of 10 or more for suitable dopings. The optimal dopings correspond to a "magic" valence electron number for which all electronic states up to a (pseudo)gap are filled. The theoretical findings are corroborated by measurements of $S$ for LaPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites. DFT derived vibrational rattling-like modes for LaPt$_4$Ge$_{12}$ indicate a small value for the lattice thermal conductivity which in combination with a large value of $S^2$ makes the La-based skutterudites appear as promising thermoelectric materials.

preprint2011arXiv

Thermoelectric properties of Ba-Cu-Si clathrates

Thermoelectric properties of the type-I clathrates Ba$_8$Cu$_x$Si$_{46-x}$ ($3.6 \leq x \leq 7$, $x$ = nominal Cu content) are investigated both experimentally and theoretically. The polycrystalline samples are prepared either by melting, ball milling and hot pressing or by melt spinning, hand milling and hot pressing techniques. Temperature-dependent electrical resistivity, $ρ(T)$, and the Seebeck coefficient, $S(T)$, measurements reveal metal-like behavior for all samples. For $x = 5$ and 6, density functional theory calculations are performed for deriving the enthalpy of formation and the electronic structure which is exploited for the calculation of Seebeck coefficients and conductivity within Boltzmann's transport theory. For simulating the properties of doped clathrates the rigid band model is applied. On the basis of the density functional theory results the experimentally observed compositional dependence of $ρ(T)$ and $S(T)$ of the whole sample series is analyzed. The highest dimensionless thermoelectric figure of merit $ZT$ of 0.28 is reached for a melt-spun sample at $600^{\circ}$C. The relatively low $ZT$ values in this system are attributed to the too high charge carrier concentrations.