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M. Wiesner

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Published work

4 published item(s)

preprint2022arXiv

Constraints on the Physical Properties of GW190814 through Simulations based on DECam Follow-up Observations by the Dark Energy Survey

On 14 August 2019, the LIGO and Virgo Collaborations detected gravitational waves from a black hole and a 2.6 solar mass compact object, possibly the first neutron star -- black hole (NSBH) merger. In search of an optical counterpart, the Dark Energy Survey (DES) obtained deep imaging of the entire 90 percent confidence level localization area with Blanco/DECam 0, 1, 2, 3, 6, and 16 nights after the merger. Objects with varying brightness were detected by the DES Pipeline and we systematically reduced the candidate counterparts through catalog matching, light curve properties, host-galaxy photometric redshifts, SOAR spectroscopic follow-up observations, and machine-learning-based photometric classification. All candidates were rejected as counterparts to the merger. To quantify the sensitivity of our search, we applied our selection criteria to full light curve simulations of supernovae and kilonovae as they would appear in the DECam observations. Since the source class of the merger was uncertain, we utilized an agnostic, three-component kilonova model based on tidally-disrupted NS ejecta properties to quantify our detection efficiency of a counterpart if the merger included a NS. We find that if a kilonova occurred during this merger, configurations where the ejected matter is greater than 0.07 solar masses, has lanthanide abundance less than $10^{-8.56}$, and has a velocity between $0.18c$ and $0.21c$ are disfavored at the $2σ$ level. Furthermore, we estimate that our background reduction methods are capable of associating gravitational wave signals with a detected electromagnetic counterpart at the $4σ$ level in $95\%$ of future follow-up observations.

preprint2011arXiv

Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a long-time challenge, since different material properties lead to high defect densities in the epitaxial layers. In recent years, nanostructures however have shown to be suitable for successfully realising light emitters on silicon, taking advantage of their geometry. Facet edges and sidewalls can minimise or eliminate the formation of dislocations, and due to the reduced contact area, nanostructures are little affected by dislocation networks. Here we demonstrate the potential of indium phosphide quantum dots as efficient light emitters on CMOS-compatible silicon substrates, with luminescence characteristics comparable to mature devices realised on III-V substrates. For the first time, electrically driven single-photon emission on silicon is presented, meeting the wavelength range of silicon avalanche photo diodes' highest detection efficiency.

preprint2011arXiv

Self heating and nonlinear current-voltage characteristics in bilayer graphene

We demonstrate by experiments and numerical simulations that the low-temperature current-voltage characteristics in diffusive bilayer graphene (BLG) exhibit a strong superlinearity at finite bias voltages. The superlinearity is weakly dependent on doping and on the length of the graphene sample. This effect can be understood as a result of Joule heating. It is stronger in BLG than in monolayer graphene (MLG), since the conductivity of BLG is more sensitive to temperature due to the higher density of electronic states at the Dirac point.

preprint2011arXiv

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V.