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Researcher profile

J. K. Viljas

J. K. Viljas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2012arXiv

Conduction mechanisms in biphenyl-dithiol single-molecule junctions

Based on density-functional theory calculations, we report a detailed study of the single-molecule charge-transport properties for a series of recently synthesized biphenyl-dithiol molecules [D. Vonlanthen et al., Angew. Chem., Int. Ed. 48, 8886 (2009); A. Mishchenko et al., Nano Lett. 10, 156 (2010)]. The torsion angle ϕ between the two phenyl rings, and hence the degree of π conjugation, is controlled by alkyl chains and methyl side groups. We consider three different coordination geometries, namely top-top, bridge-bridge, and hollow-hollow with the terminal sulfur atoms bound to one, two, and three gold surface atoms, respectively. Our calculations show that different coordination geometries give rise to conductances which vary by one order of magnitude for the same molecule. Irrespective of the coordination geometries, the charge transport calculations predict a cos^{2}ϕ dependence of the conductance, which is confirmed by our experimental measurements. We observe that the calculated transmission through biphenyl dithiols is typically dominated by a single transmission eigenchannel formed from π electrons. Only for a single molecule with a completely broken conjugation we find a perfect channel degeneracy for the hollow-hollow-type contact in our theory.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Molecular dynamics study of the thermopower of Ag, Au, and Pt nanocontacts

Using molecular dynamics simulations of many junction stretching processes we analyze the thermopower of silver (Ag), gold (Au), and platinum (Pt) atomic contacts. In all cases we observe that the thermopower vanishes on average within the standard deviation and that its fluctuations increase for decreasing minimum cross-section of the junctions. However, we find a suppression of the fluctuations of the thermopower for the s-valent metals Ag and Au, when the conductance originates from a single, perfectly transmitting channel. Essential features of the experimental results for Au, Ag, and copper (Cu) of Ludoph and van Ruitenbeek [Phys. Rev. B 59, 12290 (1999)], as yet unaddressed by atomistic studies, can hence be explained by considering the atomic and electronic structure at the disordered narrowest constriction of the contacts. For the multivalent metal Pt our calculations predict the fluctuations of the thermopower to be larger by one order of magnitude as compared to Ag and Au, and suppressions of the fluctuations as a function of the conductance are absent.

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preprint2011arXiv

Self heating and nonlinear current-voltage characteristics in bilayer graphene

We demonstrate by experiments and numerical simulations that the low-temperature current-voltage characteristics in diffusive bilayer graphene (BLG) exhibit a strong superlinearity at finite bias voltages. The superlinearity is weakly dependent on doping and on the length of the graphene sample. This effect can be understood as a result of Joule heating. It is stronger in BLG than in monolayer graphene (MLG), since the conductivity of BLG is more sensitive to temperature due to the higher density of electronic states at the Dirac point.

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preprint2011arXiv

Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling

We have studied electronic conductivity and shot noise of bilayer graphene (BLG) sheets at high bias voltages and low bath temperature $T_0=4.2$ K. As a function of bias, we find initially an increase of the differential conductivity, which we attribute to self-heating. At higher bias, the conductivity saturates and even decreases due to backscattering from optical phonons. The electron-phonon interactions are also responsible for the decay of the Fano factor at bias voltages $V>0.1$ V. The high bias electronic temperature has been calculated from shot noise measurements, and it goes up to $\sim1200$ K at $V=0.75$ V. Using the theoretical temperature dependence of BLG conductivity, we extract an effective electron-optical phonon scattering time $τ_{e-op}$. In a 230 nm long BLG sample of mobility $μ=3600$ cm$^2$V$^{-1}$s$^{-1}$, we find that $τ_{e-op}$ decreases with increasing voltage and is close to the charged impurity scattering time $τ_{imp}=60$ fs at $V=0.6$ V.

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