Source author record

M. Utz

M. Utz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el

Catalog footprint

What is connected

4works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2015arXiv

Double island Coulomb blockade in (Ga,Mn)As-nanoconstrictions

We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the single electron tunnelling (SET) and a completely insulating regime. In the SET, complex stability diagrams with nested Coulomb diamonds and anomalous conductance suppression in the vicinity of charge degeneracy points have been observed. We rationalize these observations in the SET with a double ferromagnetic island model coupled to ferromagnetic leads. Its transport characteristics are analyzed in terms of a modified orthodox theory of Coulomb blockade which takes into account the energy dependence of the density of states in the metallic islands.

preprint2013arXiv

Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As

We report high-resolution hard x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of Mn doping. Supported by theoretical calculations we identify, over the entire 1% to 13% Mn doping range, the electronic character of the states near the top of the valence band. Magnetization and temperature dependent core-level photoemission spectra reveal how the delocalized character of the Mn states enables the bulk ferromagnetic properties of (Ga,Mn)As.

preprint2010arXiv

Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs

We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.

preprint2009arXiv

All electrical measurement of the density of states in (Ga,Mn)As

We report on electrical measurements of the effective density of states in the ferromagnetic semiconductor material (Ga,Mn)As. By analyzing the conductivity correction due to enhanced electron-electron interaction the electrical diffusion constant was extracted for (Ga,Mn)As samples of different dimensionality. Using the Einstein relation allows to deduce the effective density of states of (Ga,Mn)As at the Fermi energy.