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Researcher profile

M. Tornago

M. Tornago contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-dethep-exnucl-exphysics.comp-ph

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Published work

10 published item(s)

preprint2023arXiv

Resistive Read-out in Thin Silicon Sensors with Internal Gain

Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors belonging to the second FBK production of RSD (RSD2) demonstrate how a combined resolution of 30 ps and 30 \microns can be obtained with pixels as large as $1 \times 1 $ mm$^2$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

4D Tracking: Present Status and Perspective

The past ten years have seen the advent of silicon-based precise timing detectors for charged particle tracking. The underlying reason for this evolution is a design innovation: the Low-Gain Avalanche Diode (LGAD). In its simplicity, the LGAD design is an obvious step with momentous consequences: low gain leads to large signals maintaining sensors stability and low noise, allowing sensor segmentation. Albeit introduced for a different reason, to compensate for charge trapping in irradiated silicon sensors, LGAD found fertile ground in the design of silicon-based timing detectors. Spurred by this design innovation, solid-state-based timing detectors for charged particles are going through an intense phase of R&D, and hybrid and monolithic sensors, with or without internal gain, are being explored. This contribution offers a review of this booming field.

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preprint2022arXiv

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

DC-coupled resistive silicon detectors for 4-D tracking

In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.

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preprint2022arXiv

First experimental results of the spatial resolution of RSD pad arrays read out with a 16-ch board

Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-ch digitizer. A machine learning model has been trained, with experimental data taken with a precise TCT laser setup, and then used to predict the laser shot positions, finding a spatial resolution of $\sim$~5.5~\mum.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The second production of RSD (AC-LGAD) at FBK

In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.

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preprint2020arXiv

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

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preprint2020arXiv

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Silicon Sensors for Future Particle Trackers

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking

We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.

0 citations0 reviewsNo code linkedOpen access